auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.02 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.95 EUR |
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Technische Details TK32E12N1,S1X Toshiba
Description: MOSFET N CH 120V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V.
Weitere Produktangebote TK32E12N1,S1X nach Preis ab 2.27 EUR bis 2.52 EUR
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TK32E12N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 120V 60A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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TK32E12N1,S1X Produktcode: 190147 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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