SUM110P04-05-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 47200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 4.55 EUR |
| 1600+ | 3.9 EUR |
| 2400+ | 3.67 EUR |
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Technische Details SUM110P04-05-E3 Vishay Siliconix
Description: MOSFET P-CH 40V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 15W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.
Weitere Produktangebote SUM110P04-05-E3 nach Preis ab 3.99 EUR bis 10.68 EUR
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SUM110P04-05-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -33A; 375W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -33A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 280nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 775 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P04-05-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -33A; 375W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -33A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 280nC Kind of channel: enhanced |
auf Bestellung 775 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-05-E3 | Hersteller : Vishay Semiconductors |
MOSFET 40V 110A 375W |
auf Bestellung 19804 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-05-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 15W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
auf Bestellung 48560 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-05-E3 | Hersteller : VISHAY |
Description: VISHAY - SUM110P04-05-E3 - Leistungs-MOSFET, p-Kanal, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0041ohm |
auf Bestellung 5633 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-05-E3 | Hersteller : VISHAY |
Description: VISHAY - SUM110P04-05-E3 - Leistungs-MOSFET, p-Kanal, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0041ohm |
auf Bestellung 5633 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-05-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| SUM110P04-05-E3 | Hersteller : Vishay Siliconix |
P-канальний ПТ; Udss, В = 40; Id = 110; Ciss, пФ @ Uds, В = 11300 @ 25; Qg, нКл = 280; Rds = 5 мОм; Ugs(th) = 4 В; Р, Вт = 375; Тексп, °C = -55...+175; Тип монт. = smd; D2PAK |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-05-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SUM110P04-05-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |