STI4N62K3 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2000mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| 149+ | 0.48 EUR |
| 168+ | 0.43 EUR |
| 181+ | 0.4 EUR |
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Technische Details STI4N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 3.8A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V.
Weitere Produktangebote STI4N62K3 nach Preis ab 0.4 EUR bis 2.04 EUR
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STI4N62K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2000mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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STI4N62K3 | Hersteller : STMicroelectronics |
MOSFET N-channel 620 V 17 Pwr MOSFET |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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STI4N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 3.8A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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| STI4N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 3.8A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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STI4N62K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 620V 3.8A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
Produkt ist nicht verfügbar |