SIZF4800LDT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.14 EUR |
| 6000+ | 1.1 EUR |
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Technische Details SIZF4800LDT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 80V 10A PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 12-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.5W (Ta), 56.8W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V, Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAIR® 3x3FS.
Weitere Produktangebote SIZF4800LDT-T1-GE3 nach Preis ab 1.2 EUR bis 2.55 EUR
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SIZF4800LDT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 80V 10A PWRPAIR Packaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF4800LDT-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET N-CHANNEL 30 V PWRPAIR3X3FS |
auf Bestellung 2837 Stücke: Lieferzeit 10-14 Tag (e) |
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