SIS412DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| 9000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS412DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V.
Weitere Produktangebote SIS412DN-T1-GE3 nach Preis ab 0.24 EUR bis 0.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIS412DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Drain-source voltage: 30V Drain current: 12A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 10W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
SIS412DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 30A; 10W Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Drain-source voltage: 30V Drain current: 12A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 10W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
SIS412DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 1071 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SIS412DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 1071 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
SIS412DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 14259 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
SIS412DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V |
auf Bestellung 67411 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
SIS412DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIS412DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 15.6W Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 39333 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||||
 |
SIS412DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||||
|
SIS412DN-T1-GE3 Produktcode: 173697 |
IC > IC andere |
Produkt ist nicht verfügbar
|