SH8K37GZETB Rohm Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 1.73 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.47 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.27 EUR |
| 2500+ | 1.18 EUR |
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Technische Details SH8K37GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V, Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 100µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8K37GZETB nach Preis ab 1.14 EUR bis 2.59 EUR
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SH8K37GZETB | Hersteller : ROHM Semiconductor |
 MOSFET 4V Drive Nch+Nch MOSFET. SH8K37GZETB is low on-resistance and small surface mount package MOSFET. It is suitable for switching and motor drive.Buy Sample FAQ Contact Us Data Sheet PackageDimensions |
auf Bestellung 1954 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K37GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 5.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 100µA Supplier Device Package: 8-SOP |
auf Bestellung 2356 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K37GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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SH8K37GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 5.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 100µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
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SH8K37GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |