SH8J31GZETB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 60V PCH+PCH MIDDLE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.32 EUR |
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Technische Details SH8J31GZETB Rohm Semiconductor
Description: 60V PCH+PCH MIDDLE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active.
Weitere Produktangebote SH8J31GZETB nach Preis ab 1.07 EUR bis 2.9 EUR
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SH8J31GZETB | Hersteller : Rohm Semiconductor |
Description: 60V PCH+PCH MIDDLE POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 7477 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8J31GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -18A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 85mΩ Gate charge: 40nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SH8J31GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -18A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 85mΩ Gate charge: 40nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |