RGWS60TS65GC13 ROHM Semiconductor
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.78 EUR |
| 10+ | 6.53 EUR |
| 100+ | 5.28 EUR |
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Technische Details RGWS60TS65GC13 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 51A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/91ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 156 W.
Weitere Produktangebote RGWS60TS65GC13 nach Preis ab 4.72 EUR bis 7.83 EUR
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RGWS60TS65GC13 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 51A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/91ns Switching Energy: 500µJ (on), 450µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 156 W |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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