RGW40TK65DGVC11 ROHM Semiconductor
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10 EUR |
10+ | 8.4 EUR |
25+ | 8.13 EUR |
100+ | 6.79 EUR |
250+ | 6.58 EUR |
450+ | 6.02 EUR |
900+ | 4.86 EUR |
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Technische Details RGW40TK65DGVC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 27A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/76ns, Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 59 nC, Part Status: Active, Current - Collector (Ic) (Max): 27 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 61 W.
Weitere Produktangebote RGW40TK65DGVC11 nach Preis ab 6.84 EUR bis 10.07 EUR
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RGW40TK65DGVC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 27A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/76ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 59 nC Part Status: Active Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 61 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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