RGT30TM65DGC9 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FLD 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
Description: IGBT TRNCH FLD 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
auf Bestellung 934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.4 EUR |
10+ | 3.69 EUR |
100+ | 2.99 EUR |
500+ | 2.66 EUR |
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Technische Details RGT30TM65DGC9 Rohm Semiconductor
Description: IGBT TRNCH FLD 650V 14A TO220NFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: TO-220NFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/64ns, Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 32 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 32 W.
Weitere Produktangebote RGT30TM65DGC9 nach Preis ab 2.18 EUR bis 4.44 EUR
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RGT30TM65DGC9 | Hersteller : ROHM Semiconductor | IGBT Transistors RGT30TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. |
auf Bestellung 3875 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT30TM65DGC9 | Hersteller : ROHM |
Description: ROHM - RGT30TM65DGC9 - IGBT, 14 A, 1.65 V, 32 W, 650 V, TO-220NFM, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 32W Bauform - Transistor: TO-220NFM Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 14A SVHC: Lead (17-Jan-2023) |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT30TM65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 16W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGT30TM65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 16W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |