PMV28UNEAR

PMV28UNEAR Nexperia USA Inc.


PMV28UNEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
6000+ 0.16 EUR
Mindestbestellmenge: 3000
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Technische Details PMV28UNEAR Nexperia USA Inc.

Description: MOSFET N-CH 20V 4.7A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 510mW (Ta), 3.9W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V, Qualification: AEC-Q101.

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PMV28UNEAR PMV28UNEAR Hersteller : Nexperia USA Inc. PMV28UNEA.pdf Description: MOSFET N-CH 20V 4.7A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
36+ 0.49 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 28
PMV28UNEAR Hersteller : Nexperia PMV28UNEA-1320529.pdf MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/
auf Bestellung 17955 Stücke:
Lieferzeit 10-14 Tag (e)
PMV28UNEAR Hersteller : NEXPERIA PMV28UNEA.pdf PMV28UNEAR SMD N channel transistors
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