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PJMB390N65EC_T0_00601 PanJit Semiconductor


Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
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Technische Details PJMB390N65EC_T0_00601 PanJit Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263, Case: TO263, Mounting: SMD, Kind of package: tube, Drain-source voltage: 650V, Drain current: 10A, On-state resistance: 390mΩ, Type of transistor: N-MOSFET, Power dissipation: 87.5W, Polarisation: unipolar, Gate charge: 19nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 22A, Anzahl je Verpackung: 1 Stücke.

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PJMB390N65EC_T0_00601 Hersteller : PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar