P140LF4QN-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4865 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.34 EUR |
59+ | 1.22 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
500+ | 0.9 EUR |
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Technische Details P140LF4QN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W, Technology: EETMOS4, Mounting: SMD, Case: LF (MO235B similar), Kind of package: reel; tape, Power dissipation: 217W, Type of transistor: N-MOSFET, Polarisation: unipolar, On-state resistance: 1.48mΩ, Drain current: 140A, Drain-source voltage: 40V, Gate charge: 96nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 560A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P140LF4QN-5071 nach Preis ab 0.9 EUR bis 1.34 EUR
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P140LF4QN-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.48mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 96nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A |
auf Bestellung 4865 Stücke: Lieferzeit 14-21 Tag (e) |
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