Produkte > ONSEMI > NVTYS010N04CTWG
NVTYS010N04CTWG

NVTYS010N04CTWG onsemi


nvtys010n04c-d.pdf Hersteller: onsemi
Description: T6 40V N-CH SL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.62 EUR
6000+ 0.59 EUR
9000+ 0.54 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details NVTYS010N04CTWG onsemi

Description: T6 40V N-CH SL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 20µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V.

Weitere Produktangebote NVTYS010N04CTWG nach Preis ab 0.7 EUR bis 1.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVTYS010N04CTWG NVTYS010N04CTWG Hersteller : onsemi nvtys010n04c-d.pdf Description: T6 40V N-CH SL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
13+ 1.42 EUR
100+ 0.98 EUR
500+ 0.82 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 11