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MSJP08N90A-BP

MSJP08N90A-BP Micro Commercial Co

MSJP08N90ATO220ABH.pdf Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.62Ohm @ 2.5A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 25 V
auf Bestellung 4978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.32 EUR
10+ 4.46 EUR
100+ 3.61 EUR
500+ 3.21 EUR
1000+ 2.75 EUR
2000+ 2.59 EUR
Mindestbestellmenge: 4
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Technische Details MSJP08N90A-BP Micro Commercial Co

Description: N-CHANNEL MOSFET,TO-220AB(H), Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.62Ohm @ 2.5A, 10V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 25 V.

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MSJP08N90A-BP MSJP08N90A-BP Hersteller : Micro Commercial Components (MCC) MSJP08N90ATO220ABH.pdf MOSFET
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