Technische Details MG12100S-BN2MM Littelfuse
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Case: package S, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Field Stop; Trench, Topology: IGBT half-bridge, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MG12100S-BN2MM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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MG12100S-BN2MM | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 140A 450000mW 7-Pin Bulk |
Produkt ist nicht verfügbar |
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| MG12100S-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: package S Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MG12100S-BN2MM | Hersteller : Littelfuse Inc. |
Description: IGBT MODULE 1200V 140A 450W S3 |
Produkt ist nicht verfügbar |
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| MG12100S-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: package S Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |