IRL2505STRLPBF Infineon Technologies
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.79 EUR |
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Technische Details IRL2505STRLPBF Infineon Technologies
Description: MOSFET N-CH 55V 104A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V.
Weitere Produktangebote IRL2505STRLPBF nach Preis ab 1.97 EUR bis 4.33 EUR
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IRL2505STRLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL2505STRLPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 55V 104A 8mOhm 86.7nC Log Lvl |
auf Bestellung 2953 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL2505STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRL2505STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 360A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
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IRL2505STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL2505STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 104A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRL2505STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 360A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |