IPN60R600P7SATMA1 Infineon Technologies
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 1.14 EUR |
| 160+ | 0.94 EUR |
| 186+ | 0.77 EUR |
| 200+ | 0.7 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
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Technische Details IPN60R600P7SATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL 600V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 7W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V.
Weitere Produktangebote IPN60R600P7SATMA1 nach Preis ab 0.47 EUR bis 1.95 EUR
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IPN60R600P7SATMA1 | Hersteller : Infineon Technologies |
 MOSFET CONSUMER |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
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IPN60R600P7SATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPN60R600P7SATMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.49 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 7W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.49ohm |
auf Bestellung 2193 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN60R600P7SATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPN60R600P7SATMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.49 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 7W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.49ohm |
auf Bestellung 2193 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN60R600P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPN60R600P7SATMA1 | Hersteller : Infineon |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) SOT-223 T/R IPN60R600P7SATMA1 IPN60R600P7S TIPN60r600p7s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IPN60R600P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN60R600P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN60R600P7SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPN60R600P7SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL 600V 6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPN60R600P7SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL 600V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPN60R600P7SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |