IPI60R099CPXKSA1 Infineon Technologies
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 12.47 EUR |
| 15+ | 10.24 EUR |
| 100+ | 8.16 EUR |
| 500+ | 6.86 EUR |
| 1000+ | 5.92 EUR |
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Technische Details IPI60R099CPXKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V.
Weitere Produktangebote IPI60R099CPXKSA1 nach Preis ab 5.92 EUR bis 13.25 EUR
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IPI60R099CPXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI60R099CPXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI60R099CPXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI60R099CPXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI60R099CPXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI60R099CPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO262-3-1 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 500 Stücke |
Produkt ist nicht verfügbar |
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IPI60R099CPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO262-3-1 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |