IPI200N25N3GAKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details IPI200N25N3GAKSA1 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3, Type of transistor: N-MOSFET, Technology: OptiMOS™ 3, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 88A, Power dissipation: 300W, Case: PG-TO262-3, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPI200N25N3GAKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPI200N25N3GAKSA1 | Hersteller : Infineon Technologies | Description: MOSFET N-CH 250V 64A TO262-3 |
Produkt ist nicht verfügbar |
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IPI200N25N3GAKSA1 | Hersteller : Infineon Technologies | Description: MOSFET N-CH 250V 64A TO262-3 |
Produkt ist nicht verfügbar |
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IPI200N25N3GAKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 88A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |