IPI045N10N3GXKSA1 Infineon Technologies
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 5.23 EUR |
| 34+ | 4.5 EUR |
| 100+ | 3.54 EUR |
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Technische Details IPI045N10N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V.
Weitere Produktangebote IPI045N10N3GXKSA1 nach Preis ab 3.87 EUR bis 6.2 EUR
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IPI045N10N3GXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI045N10N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V |
auf Bestellung 459 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI045N10N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI045N10N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI045N10N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IPI045N10N3GXKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 |
Produkt ist nicht verfügbar |
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IPI045N10N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |