IKD06N60RATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.72 EUR |
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Technische Details IKD06N60RATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/127ns, Switching Energy: 110µJ (on), 220µJ (off), Test Condition: 400V, 6A, 23Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 100 W.
Weitere Produktangebote IKD06N60RATMA1 nach Preis ab 0.61 EUR bis 1.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKD06N60RATMA1 | Hersteller : Infineon Technologies |
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IKD06N60RATMA1 | Hersteller : Infineon Technologies |
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IKD06N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 19ns Turn-off time: 279ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1213 Stücke: Lieferzeit 7-14 Tag (e) |
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IKD06N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 19ns Turn-off time: 279ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1213 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD06N60RATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT w/ INTG DIODE 600V 12A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/127ns Switching Energy: 110µJ (on), 220µJ (off) Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD06N60RATMA1 - IGBT, 6 A, 2.1 V, 100 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 6A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD06N60RATMA1 Produktcode: 182592 |
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IKD06N60RATMA1 | Hersteller : Infineon Technologies |
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