IDH12G65C6XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 27A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIL CARB 650V 27A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.32 EUR |
50+ | 6.59 EUR |
100+ | 5.65 EUR |
500+ | 5.02 EUR |
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Technische Details IDH12G65C6XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 27A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 594pF @ 1V, 1MHz, Current - Average Rectified (Io): 27A, Supplier Device Package: PG-TO220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 40 µA @ 420 V.
Weitere Produktangebote IDH12G65C6XKSA1 nach Preis ab 4.12 EUR bis 8.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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IDH12G65C6XKSA1 | Hersteller : Infineon Technologies | Schottky Diodes & Rectifiers SIC DIODES |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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IDH12G65C6XKSA1 | Hersteller : Infineon Technologies | Diode Schottky SiC 650V 27A 2-Pin(2+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IDH12G65C6XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IDH12G65C6XKSA1 - SiC-Schottky-Diode, CoolSiC 6G 650V, Einfach, 650 V, 27 A, 17.1 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 17.1 Diodenmontage: Durchsteckmontage hazardous: false Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 27 euEccn: NLR Wiederkehrende Spitzensperrspannung: 650 Anzahl der Pins: 2 Pins Produktpalette: CoolSiC 6G 650V Betriebstemperatur, max.: 175 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 994 Stücke: Lieferzeit 14-21 Tag (e) |
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IDH12G65C6XKSA1 Produktcode: 150354 |
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
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IDH12G65C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 81W; PG-TO220-2 Mounting: THT Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 51A Leakage current: 92µA Power dissipation: 81W Kind of package: tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Heatsink thickness: 1.17...1.37mm Case: PG-TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDH12G65C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 81W; PG-TO220-2 Mounting: THT Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 51A Leakage current: 92µA Power dissipation: 81W Kind of package: tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Heatsink thickness: 1.17...1.37mm Case: PG-TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.25V |
Produkt ist nicht verfügbar |