IDH03G65C5XKSA1 Infineon Technologies
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Technische Details IDH03G65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 100pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote IDH03G65C5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IDH03G65C5XKSA1 | Hersteller : Infineon Technologies |
 Diode Schottky 650V 3A 2-Pin(2+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IDH03G65C5XKSA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 3A TO220-2-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 100pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |