HN2A01FU-Y(TE85L,F Toshiba
auf Bestellung 2252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.13 EUR |
| 24000+ | 0.12 EUR |
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Technische Details HN2A01FU-Y(TE85L,F Toshiba
Description: TRANS 2PNP 50V 0.15A US6, Packaging: Cut Tape (CT), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6.
Weitere Produktangebote HN2A01FU-Y(TE85L,F nach Preis ab 0.16 EUR bis 0.77 EUR
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HN2A01FU-Y(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS 2PNP 50V 0.15A US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 |
auf Bestellung 2298 Stücke: Lieferzeit 10-14 Tag (e) |
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| HN2A01FU-Y(TE85L,F | Hersteller : Toshiba |
Trans GP BJT PNP 50V 0.15A 100mW 6-Pin US T/R |
Produkt ist nicht verfügbar |