HN1C03FU-B,LF

HN1C03FU-B,LF Toshiba Semiconductor and Storage


HN1C03FU_datasheet_en_20140301.pdf?did=19156&prodName=HN1C03FU Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
9000+ 0.087 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1C03FU-B,LF Toshiba Semiconductor and Storage

Description: NPN + NPN IND. TRANSISTOR VCEO20, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 300mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V, Frequency - Transition: 30MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1C03FU-B,LF nach Preis ab 0.12 EUR bis 0.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN1C03FU-B,LF HN1C03FU-B,LF Hersteller : Toshiba Semiconductor and Storage HN1C03FU_datasheet_en_20140301.pdf?did=19156&prodName=HN1C03FU Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 17578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.41 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
HN1C03FU-B,LF HN1C03FU-B,LF Hersteller : Toshiba HN1C03FU_datasheet_en_20140301-1609071.pdf Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
auf Bestellung 14510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.67 EUR
10+ 0.51 EUR
100+ 0.29 EUR
500+ 0.19 EUR
Mindestbestellmenge: 5