Produkte > TOSHIBA > HN1C01FE-GR,LF
HN1C01FE-GR,LF

HN1C01FE-GR,LF Toshiba

HN1C01FE_datasheet_en_20210818-1916356.pdf Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Small Signal Amp
auf Bestellung 31724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.46 EUR
10+ 0.32 EUR
100+ 0.13 EUR
1000+ 0.079 EUR
4000+ 0.072 EUR
8000+ 0.065 EUR
24000+ 0.062 EUR
Mindestbestellmenge: 7
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1C01FE-GR,LF Toshiba

Description: TRANS 2NPN 50V 0.15A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote HN1C01FE-GR,LF nach Preis ab 0.079 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN1C01FE-GR,LF HN1C01FE-GR,LF Hersteller : Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
2000+ 0.079 EUR
Mindestbestellmenge: 39
HN1C01FE-GR,LF HN1C01FE-GR,LF Hersteller : Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar