G33N03D3 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.27 EUR |
| 15000+ | 0.24 EUR |
| 30000+ | 0.22 EUR |
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Technische Details G33N03D3 Goford Semiconductor
Description: N30V,RD(MAX).
Weitere Produktangebote G33N03D3 nach Preis ab 0.49 EUR bis 1.37 EUR
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G33N03D3 | Hersteller : Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 18.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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G33N03D3 | Hersteller : Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 18.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
auf Bestellung 107329 Stücke: Lieferzeit 10-14 Tag (e) |
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