FS03MR12A6MA1BBPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SIC 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3627.96 EUR |
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Technische Details FS03MR12A6MA1BBPSA1 Infineon Technologies
Description: SIC 6N-CH 1200V AG-HYBRIDD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 240mA, Supplier Device Package: AG-HYBRIDD-2, Part Status: Active.
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