Technische Details FGD2736G3-F085V ON Semiconductor
Category: SMD IGBT transistors, Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems, Application: ignition systems, Collector-emitter voltage: 360V, Gate-emitter voltage: ±10V, Collector current: 24.3A, Type of transistor: IGBT, Power dissipation: 150W, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Gate charge: 18nC, Mounting: SMD, Case: DPAK, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote FGD2736G3-F085V
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FGD2736G3-F085V | Hersteller : ONSEMI |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 360V Gate-emitter voltage: ±10V Collector current: 24.3A Type of transistor: IGBT Power dissipation: 150W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Gate charge: 18nC Mounting: SMD Case: DPAK Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FGD2736G3-F085V | Hersteller : onsemi | Description: IGBT ECOSPARK1 IGN TO252 |
Produkt ist nicht verfügbar |
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FGD2736G3-F085V | Hersteller : onsemi |
IGBT Transistors ECOSPARK1 IGN IGBT |
Produkt ist nicht verfügbar |
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| FGD2736G3-F085V | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 360V Gate-emitter voltage: ±10V Collector current: 24.3A Type of transistor: IGBT Power dissipation: 150W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Gate charge: 18nC Mounting: SMD Case: DPAK |
Produkt ist nicht verfügbar |