FDB088N08 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 75A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6595 pF @ 25 V
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.56 EUR |
| 10+ | 3.79 EUR |
| 100+ | 3.01 EUR |
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Technische Details FDB088N08 onsemi
Description: MOSFET N-CH 75V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 75A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6595 pF @ 25 V.
Weitere Produktangebote FDB088N08 nach Preis ab 2.06 EUR bis 4.59 EUR
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FDB088N08 | Hersteller : onsemi / Fairchild |
MOSFET NCH 75V 8.8Mohm |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB088N08 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R |
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| FDB088N08 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Power dissipation: 160W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 340A Drain-source voltage: 75V Drain current: 60A On-state resistance: 8.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB088N08 | Hersteller : onsemi |
Description: MOSFET N-CH 75V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 75A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6595 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDB088N08 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Power dissipation: 160W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 340A Drain-source voltage: 75V Drain current: 60A On-state resistance: 8.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC |
Produkt ist nicht verfügbar |