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FCP150N65F

FCP150N65F onsemi

fcp150n65f-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.4 EUR
50+ 6.64 EUR
100+ 5.69 EUR
500+ 5.06 EUR
1000+ 4.33 EUR
2000+ 4.08 EUR
Mindestbestellmenge: 3
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Technische Details FCP150N65F onsemi

Description: MOSFET N-CH 650V 24A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.4mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V.

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FCP150N65F FCP150N65F Hersteller : onsemi / Fairchild FCP150N65F_D-2312087.pdf MOSFET N-Channel SuperFET II FRFET MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.54 EUR
10+ 7.78 EUR
50+ 5.74 EUR
100+ 5.16 EUR
250+ 5.12 EUR
500+ 4.77 EUR
800+ 4.33 EUR
FCP150N65F FCP150N65F Hersteller : ON Semiconductor 4268202450666250fcp150n65f-d.pdf Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube
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