DMN2023UCB4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH X1-WLB1818-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X1-WLB1818-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 0.95 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.57 EUR |
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Technische Details DMN2023UCB4-7 Diodes Incorporated
Description: MOSFET 2N-CH X1-WLB1818-4, Packaging: Cut Tape (CT), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.45W, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X1-WLB1818-4, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN2023UCB4-7 nach Preis ab 0.29 EUR bis 1 EUR
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DMN2023UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X1-WLB1818-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 432 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2023UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
Produkt ist nicht verfügbar |
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| DMN2023UCB4-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R |
Produkt ist nicht verfügbar |
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| DMN2023UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Kind of package: reel; tape Pulsed drain current: 20A Drain-source voltage: 24V Drain current: 4.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN2023UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X1-WLB1818-4 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN2023UCB4-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF |
Produkt ist nicht verfügbar |
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| DMN2023UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Kind of package: reel; tape Pulsed drain current: 20A Drain-source voltage: 24V Drain current: 4.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |