CIG21W1R0MNE SAMSUNGEM
Hersteller: SAMSUNGEM
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.05A 0.13Ohm DCR 0805 T/R
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.05A 0.13Ohm DCR 0805 T/R
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Technische Details CIG21W1R0MNE SAMSUNGEM
Description: FIXED IND 1UH 1.05A 133 MOHM SMD, Packaging: Tape & Reel (TR), Tolerance: ±25%, Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Multilayer, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 133mOhm, Inductance Frequency - Test: 1 MHz, Inductance: 1 µH, Current Rating (Amps): 1.05 A.
Weitere Produktangebote CIG21W1R0MNE
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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CIG21W1R0MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1UH 1.05A 133 MOHM SMD Packaging: Tape & Reel (TR) Tolerance: ±25% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 133mOhm Inductance Frequency - Test: 1 MHz Inductance: 1 µH Current Rating (Amps): 1.05 A |
Produkt ist nicht verfügbar |
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CIG21W1R0MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1UH 1.05A 133 MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±25% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 133mOhm Inductance Frequency - Test: 1 MHz Inductance: 1 µH Current Rating (Amps): 1.05 A |
Produkt ist nicht verfügbar |