BYT51G-TR Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 400V 1.5A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.36 EUR |
| 10000+ | 0.33 EUR |
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Technische Details BYT51G-TR Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A SOD57, Packaging: Tape & Reel (TR), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Weitere Produktangebote BYT51G-TR nach Preis ab 0.38 EUR bis 1.18 EUR
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BYT51G-TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.5A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
auf Bestellung 24293 Stücke: Lieferzeit 10-14 Tag (e) |
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