AON3820 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 1.3W
Gate charge: 12.5nC
Drain-source voltage: 24V
Kind of channel: enhanced
Gate-source voltage: ±12V
Type of transistor: N-MOSFET x2
Semiconductor structure: common drain
On-state resistance: 8.9mΩ
Drain current: 6.2A
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 1.3W
Gate charge: 12.5nC
Drain-source voltage: 24V
Kind of channel: enhanced
Gate-source voltage: ±12V
Type of transistor: N-MOSFET x2
Semiconductor structure: common drain
On-state resistance: 8.9mΩ
Drain current: 6.2A
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
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Technische Details AON3820 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3, Mounting: SMD, Case: DFN3x3, Power dissipation: 1.3W, Gate charge: 12.5nC, Drain-source voltage: 24V, Kind of channel: enhanced, Gate-source voltage: ±12V, Type of transistor: N-MOSFET x2, Semiconductor structure: common drain, On-state resistance: 8.9mΩ, Drain current: 6.2A, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote AON3820
Foto | Bezeichnung | Hersteller | Beschreibung |
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AON3820 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 1.3W Gate charge: 12.5nC Drain-source voltage: 24V Kind of channel: enhanced Gate-source voltage: ±12V Type of transistor: N-MOSFET x2 Semiconductor structure: common drain On-state resistance: 8.9mΩ Drain current: 6.2A Polarisation: unipolar Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |