Produkte > XSEMI CORPORATION > Alle Produkte des Herstellers XSEMI CORPORATION (22) > Seite 1 nach 1
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XP1504MT | XSemi Corporation |
 Description: MOSFET N-CH 150V 5A PMPAK-3X3Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 15.8A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Power Dissipation (Max): 5W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V |
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XP1504MT | XSemi Corporation |
Description: MOSFET N-CH 150V 5A PMPAK-3X3 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 15.8A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Power Dissipation (Max): 5W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP1504YT | XSemi Corporation |
Description: MOSFET N-CH -20V -2.5A SOT-23S Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 3 x 3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP1504YT | XSemi Corporation |
Description: MOSFET N-CH -20V -2.5A SOT-23S Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 3 x 3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V |
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XP3700YT | XSemi Corporation |
Description: MOSFET N/P-CH 30V 8.7A PMPAK3X3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PMPAK® 3 x 3 |
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XP3700YT | XSemi Corporation |
Description: MOSFET N/P-CH 30V 8.7A PMPAK3X3 Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PMPAK® 3 x 3 |
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XP3N1R8MT | XSemi Corporation |
Description: MOSFET N-CH 30V 32.8A PMPAK-5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 1.89mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
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XP3N1R8MT | XSemi Corporation |
Description: MOSFET N-CH 30V 32.8A PMPAK-5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 1.89mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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XP3N2R8AMT | XSemi Corporation |
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V |
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XP3N2R8AMT | XSemi Corporation |
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP3N9R5AMT | XSemi Corporation |
Description: MOSFET N-CH 30V 38.7A PMPAK-3X3 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38.7A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9.5A, 10V Power Dissipation (Max): 5W (Ta), 22.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V |
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XP3N9R5AMT | XSemi Corporation |
Description: MOSFET N-CH 30V 38.7A PMPAK-3X3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38.7A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9.5A, 10V Power Dissipation (Max): 5W (Ta), 22.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V |
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XP4024GEMT | XSemi Corporation |
Description: MOSFET N-CH 30V 37A PMPAK-5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 36.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
Produkt ist nicht verfügbar |
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XP4024GEMT | XSemi Corporation |
Description: MOSFET N-CH 30V 37A PMPAK-5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 36.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP4060CMT | XSemi Corporation |
Description: MOSFET N-CH 30V 26A PMPAK-5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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XP4060CMT | XSemi Corporation |
Description: MOSFET N-CH 30V 26A PMPAK-5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP4064CMT | XSemi Corporation |
Description: MOSFET N-CH 30V 23.4A PMPAK-5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V |
Produkt ist nicht verfügbar |
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XP4064CMT | XSemi Corporation |
Description: MOSFET N-CH 30V 23.4A PMPAK-5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP4N2R1MT | XSemi Corporation |
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V |
Produkt ist nicht verfügbar |
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XP4N2R1MT | XSemi Corporation |
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP4N2R5MT | XSemi Corporation |
Description: MOSFET N-CH 40V 75A TO-252 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP4N2R5MT | XSemi Corporation |
Description: MOSFET N-CH 40V 75A TO-252 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V |
Produkt ist nicht verfügbar |
| XP1504MT |
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Hersteller: XSemi Corporation
Description: MOSFET N-CH 150V 5A PMPAK-3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
Description: MOSFET N-CH 150V 5A PMPAK-3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
Produkt ist nicht verfügbar
| XP1504MT |
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Hersteller: XSemi Corporation
Description: MOSFET N-CH 150V 5A PMPAK-3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
Description: MOSFET N-CH 150V 5A PMPAK-3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 3.07 EUR |
| 100+ | 2.44 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.75 EUR |
| XP1504YT |
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Hersteller: XSemi Corporation
Description: MOSFET N-CH -20V -2.5A SOT-23S
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
Description: MOSFET N-CH -20V -2.5A SOT-23S
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.38 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.6 EUR |
| XP1504YT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH -20V -2.5A SOT-23S
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
Description: MOSFET N-CH -20V -2.5A SOT-23S
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V
Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V
Produkt ist nicht verfügbar
| XP3700YT |
Hersteller: XSemi Corporation
Description: MOSFET N/P-CH 30V 8.7A PMPAK3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PMPAK® 3 x 3
Description: MOSFET N/P-CH 30V 8.7A PMPAK3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PMPAK® 3 x 3
Produkt ist nicht verfügbar
| XP3700YT |
Hersteller: XSemi Corporation
Description: MOSFET N/P-CH 30V 8.7A PMPAK3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PMPAK® 3 x 3
Description: MOSFET N/P-CH 30V 8.7A PMPAK3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PMPAK® 3 x 3
Produkt ist nicht verfügbar
| XP3N1R8MT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 32.8A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 1.89mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 30V 32.8A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 1.89mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
| XP3N1R8MT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 32.8A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 1.89mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 30V 32.8A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 1.89mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.27 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.22 EUR |
| XP3N2R8AMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
Produkt ist nicht verfügbar
| XP3N2R8AMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.67 EUR |
| 13+ | 1.37 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.73 EUR |
| XP3N9R5AMT |
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 38.7A PMPAK-3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 5W (Ta), 22.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
Description: MOSFET N-CH 30V 38.7A PMPAK-3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 5W (Ta), 22.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
Produkt ist nicht verfügbar
| XP3N9R5AMT |
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 38.7A PMPAK-3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 5W (Ta), 22.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
Description: MOSFET N-CH 30V 38.7A PMPAK-3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 5W (Ta), 22.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
Produkt ist nicht verfügbar
| XP4024GEMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 37A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 37A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
| XP4024GEMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 37A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 37A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.22 EUR |
| XP4060CMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 26A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 30V 26A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
| XP4060CMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 26A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 30V 26A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.75 EUR |
| 10+ | 3.95 EUR |
| 100+ | 3.14 EUR |
| 500+ | 2.66 EUR |
| 1000+ | 2.26 EUR |
| XP4064CMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 23.4A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Description: MOSFET N-CH 30V 23.4A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Produkt ist nicht verfügbar
| XP4064CMT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 30V 23.4A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Description: MOSFET N-CH 30V 23.4A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.8 EUR |
| 10+ | 2.33 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.33 EUR |
| XP4N2R1MT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V
Produkt ist nicht verfügbar
| XP4N2R1MT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 4.83 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.47 EUR |
| 1000+ | 2.97 EUR |
| XP4N2R5MT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.7 EUR |
| 10+ | 3.89 EUR |
| 100+ | 3.1 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.23 EUR |
| XP4N2R5MT |
|
Hersteller: XSemi Corporation
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V
Produkt ist nicht verfügbar