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ESDHD24BCX WeEn Semiconductors ESDHDxxBC.pdf Description: ESDHD24BC/SOD323/REEL 7" Q1/T1 *
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
BT169D-L,112 BT169D-L,112 WeEn Semiconductors bt169d-l.pdf Description: SCR 400V 800MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
WN3S3060CQ WeEn Semiconductors Description: DIODE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
P1KSMBJ47CAJ WeEn Semiconductors P1KSMBJ%20Series.pdf Description: P1KSMBJ47CA/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
PHD13003C,126 PHD13003C,126 WeEn Semiconductors phd13003c.pdf Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
Produkt ist nicht verfügbar
P1KSMBJ9.1AJ WeEn Semiconductors P1KSMBJ%20Series.pdf Description: P1KSMBJ9.1A/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.6A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P1KSMBJ8.2AJ WeEn Semiconductors P1KSMBJ%20Series.pdf Description: P1KSMBJ8.2A/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ60CAJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ60CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 67.2V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
WNSC2D151200WQ WNSC2D151200WQ WeEn Semiconductors WNSC2D151200W.pdf Description: DIODE SIL CARB 1.2KV 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
auf Bestellung 4589 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.61 EUR
10+ 8.24 EUR
100+ 6.87 EUR
500+ 6.06 EUR
1000+ 5.45 EUR
2000+ 5.11 EUR
Mindestbestellmenge: 2
PHE13003C,126 PHE13003C,126 WeEn Semiconductors phe13003c.pdf Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
auf Bestellung 10350 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 26
PHE13003C,126 PHE13003C,126 WeEn Semiconductors phe13003c.pdf Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
Produkt ist nicht verfügbar
BYC75W-600PT2Q BYC75W-600PT2Q WeEn Semiconductors BYC75W-600PT2.pdf Description: DIODE GEN PURP 600V 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 548 Stücke:
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4+4.56 EUR
30+ 3.6 EUR
120+ 3.09 EUR
510+ 2.74 EUR
Mindestbestellmenge: 4
BYC75W-600PQ BYC75W-600PQ WeEn Semiconductors byc75w-600p.pdf Description: DIODE GEN PURP 600V 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 964 Stücke:
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4+5.74 EUR
30+ 4.55 EUR
120+ 3.9 EUR
510+ 3.47 EUR
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P6SMBJ9.0AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ9.0A/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.1V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ43CAJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ43CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ43CAJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: SMBJ43CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P1KSMBJ43CAJ WeEn Semiconductors P1KSMBJ%20Series.pdf Description: P1KSMBJ43CA/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SOD17CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD17CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD18CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD18CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD16CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD16CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.93V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD24CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD24CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.95V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD30CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD30CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.55V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD33CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD33CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.98V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD22CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD22CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.63V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD28CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD28CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.33V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD20CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD20CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.41V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SOD28CAX WeEn Semiconductors P4SOD%20Series_10.pdf Description: P4SOD28CA/SOD123/REEL 7" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
ACTT8-800C0Q ACTT8-800C0Q WeEn Semiconductors ACTT8-800C0.pdf Description: TRIAC 800V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
P6SMBJ11AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ11A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.32V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDJ18AJ SMDJ18AJ WeEn Semiconductors SMDJ%20Series_17.pdf Description: SMDJ18A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
WNSC2D12650TJ WNSC2D12650TJ WeEn Semiconductors WNSC2D12650T.pdf Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D12650TJ WNSC2D12650TJ WeEn Semiconductors WNSC2D12650T.pdf Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.37 EUR
10+ 4.51 EUR
100+ 3.65 EUR
500+ 3.24 EUR
1000+ 2.78 EUR
Mindestbestellmenge: 4
WNSC2D04650XQ WNSC2D04650XQ WeEn Semiconductors Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+ 1.99 EUR
100+ 1.35 EUR
500+ 1.07 EUR
1000+ 0.98 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 6
WNSC2D08650Q WNSC2D08650Q WeEn Semiconductors WNSC2D08650.pdf Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.8 EUR
50+ 3.05 EUR
100+ 2.51 EUR
500+ 2.12 EUR
1000+ 1.8 EUR
2000+ 1.71 EUR
Mindestbestellmenge: 5
WNSC2D10650TJ WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D10650TJ WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
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10+ 3.93 EUR
100+ 2.75 EUR
500+ 2.25 EUR
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WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.83 EUR
Mindestbestellmenge: 2500
WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 5023 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
11+ 1.64 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 9
WNSC2D0512006Q WNSC2D0512006Q WeEn Semiconductors WNSC2D051200.pdf Description: DIODE SIL CARB 1.2KV 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D1012006Q WNSC2D1012006Q WeEn Semiconductors WNSC2D101200.pdf Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D101200W6Q WNSC2D101200W6Q WeEn Semiconductors WNSC2D101200W.pdf Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 490pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D101200CW6Q WNSC2D101200CW6Q WeEn Semiconductors WNSC2D101200CW.pdf Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D151200W6Q WNSC2D151200W6Q WeEn Semiconductors WNSC2D151200W.pdf Description: WNSC2D151200W/TO247-2L/STANDARD
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D2012006Q WNSC2D2012006Q WeEn Semiconductors WNSC2D201200.pdf Description: WNSC2D201200/SOD59A/STANDARD MAR
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 950pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D201200W6Q WNSC2D201200W6Q WeEn Semiconductors WNSC2D201200W.pdf Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D301200W6Q WNSC2D301200W6Q WeEn Semiconductors WNSC2D301200W.pdf Description: WNSC2D301200W/TO247-2L/STANDARD
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1407pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D301200CW6Q WNSC2D301200CW6Q WeEn Semiconductors WNSC2D301200CW.pdf Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D401200CW6Q WNSC2D401200CW6Q WeEn Semiconductors WNSC2D401200CW.pdf Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 2000 V
Produkt ist nicht verfügbar
WNSC2D401200W6Q WNSC2D401200W6Q WeEn Semiconductors WNSC2D401200W.pdf Description: WNSC2D401200W/TO247-2L/STANDARD
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2068pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
SOD6.5CAX WeEn Semiconductors SOD%20Series_19.pdf Description: SOD6.5CA/SOD123/REEL 7" Q1/T1 *
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.27V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDJ43AJ SMDJ43AJ WeEn Semiconductors SMDJ%20Series_17.pdf Description: SMDJ43A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ45AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ45A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ45AJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: SMBJ45A/SMB/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ17CAJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ17CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ17CAJ WeEn Semiconductors SMBJ%20Series_132.pdf Description: SMBJ17CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
ACTT6X-800CNQ ACTT6X-800CNQ WeEn Semiconductors actt6x-800cn.pdf Description: TRIAC SENS GATE 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
P6SMBJ40AJ WeEn Semiconductors P6SMBJ%20Series.pdf Description: P6SMBJ40A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ64CAJ WeEn Semiconductors SMAJ%20Series%5B63%5D_48.pdf Description: SMAJ64CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.6V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ45CAJ WeEn Semiconductors SMAJ%20Series%5B63%5D_48.pdf Description: SMAJ45CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
ESDHD24BCX ESDHDxxBC.pdf
Hersteller: WeEn Semiconductors
Description: ESDHD24BC/SOD323/REEL 7" Q1/T1 *
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
BT169D-L,112 bt169d-l.pdf
BT169D-L,112
Hersteller: WeEn Semiconductors
Description: SCR 400V 800MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
WN3S3060CQ
Hersteller: WeEn Semiconductors
Description: DIODE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
P1KSMBJ47CAJ P1KSMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P1KSMBJ47CA/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
PHD13003C,126 phd13003c.pdf
PHD13003C,126
Hersteller: WeEn Semiconductors
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
Produkt ist nicht verfügbar
P1KSMBJ9.1AJ P1KSMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P1KSMBJ9.1A/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.6A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P1KSMBJ8.2AJ P1KSMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P1KSMBJ8.2A/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ60CAJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ60CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 67.2V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
WNSC2D151200WQ WNSC2D151200W.pdf
WNSC2D151200WQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
auf Bestellung 4589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.61 EUR
10+ 8.24 EUR
100+ 6.87 EUR
500+ 6.06 EUR
1000+ 5.45 EUR
2000+ 5.11 EUR
Mindestbestellmenge: 2
PHE13003C,126 phe13003c.pdf
PHE13003C,126
Hersteller: WeEn Semiconductors
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
auf Bestellung 10350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 26
PHE13003C,126 phe13003c.pdf
PHE13003C,126
Hersteller: WeEn Semiconductors
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
Produkt ist nicht verfügbar
BYC75W-600PT2Q BYC75W-600PT2.pdf
BYC75W-600PT2Q
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.56 EUR
30+ 3.6 EUR
120+ 3.09 EUR
510+ 2.74 EUR
Mindestbestellmenge: 4
BYC75W-600PQ byc75w-600p.pdf
BYC75W-600PQ
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 75 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.74 EUR
30+ 4.55 EUR
120+ 3.9 EUR
510+ 3.47 EUR
Mindestbestellmenge: 4
P6SMBJ9.0AJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ9.0A/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.1V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ43CAJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ43CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ43CAJ SMBJ%20Series_132.pdf
Hersteller: WeEn Semiconductors
Description: SMBJ43CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.7A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P1KSMBJ43CAJ P1KSMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P1KSMBJ43CA/SMB/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SOD17CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD17CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD18CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD18CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD16CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD16CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.93V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD24CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD24CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.95V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD30CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD30CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.55V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD33CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD33CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.98V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD22CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD22CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.63V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD28CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD28CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.33V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SOD20CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD20CA/SOD123/REEL 7" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.41V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SOD28CAX P4SOD%20Series_10.pdf
Hersteller: WeEn Semiconductors
Description: P4SOD28CA/SOD123/REEL 7" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
ACTT8-800C0Q ACTT8-800C0.pdf
ACTT8-800C0Q
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
P6SMBJ11AJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ11A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.32V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDJ18AJ SMDJ%20Series_17.pdf
SMDJ18AJ
Hersteller: WeEn Semiconductors
Description: SMDJ18A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
WNSC2D12650TJ WNSC2D12650T.pdf
WNSC2D12650TJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D12650TJ WNSC2D12650T.pdf
WNSC2D12650TJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.37 EUR
10+ 4.51 EUR
100+ 3.65 EUR
500+ 3.24 EUR
1000+ 2.78 EUR
Mindestbestellmenge: 4
WNSC2D04650XQ
WNSC2D04650XQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.13 EUR
10+ 1.99 EUR
100+ 1.35 EUR
500+ 1.07 EUR
1000+ 0.98 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 6
WNSC2D08650Q WNSC2D08650.pdf
WNSC2D08650Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.8 EUR
50+ 3.05 EUR
100+ 2.51 EUR
500+ 2.12 EUR
1000+ 1.8 EUR
2000+ 1.71 EUR
Mindestbestellmenge: 5
WNSC2D10650TJ WNSC2D10650T.pdf
WNSC2D10650TJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D10650TJ WNSC2D10650T.pdf
WNSC2D10650TJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.98 EUR
10+ 3.93 EUR
100+ 2.75 EUR
500+ 2.25 EUR
Mindestbestellmenge: 3
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.83 EUR
Mindestbestellmenge: 2500
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 5023 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
11+ 1.64 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 9
WNSC2D0512006Q WNSC2D051200.pdf
WNSC2D0512006Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D10650XQ
WNSC2D10650XQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D1012006Q WNSC2D101200.pdf
WNSC2D1012006Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D101200W6Q WNSC2D101200W.pdf
WNSC2D101200W6Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 490pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D101200CW6Q WNSC2D101200CW.pdf
WNSC2D101200CW6Q
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D151200W6Q WNSC2D151200W.pdf
WNSC2D151200W6Q
Hersteller: WeEn Semiconductors
Description: WNSC2D151200W/TO247-2L/STANDARD
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D2012006Q WNSC2D201200.pdf
WNSC2D2012006Q
Hersteller: WeEn Semiconductors
Description: WNSC2D201200/SOD59A/STANDARD MAR
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 950pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D201200W6Q WNSC2D201200W.pdf
WNSC2D201200W6Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D301200W6Q WNSC2D301200W.pdf
WNSC2D301200W6Q
Hersteller: WeEn Semiconductors
Description: WNSC2D301200W/TO247-2L/STANDARD
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1407pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D301200CW6Q WNSC2D301200CW.pdf
WNSC2D301200CW6Q
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Produkt ist nicht verfügbar
WNSC2D401200CW6Q WNSC2D401200CW.pdf
WNSC2D401200CW6Q
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 2000 V
Produkt ist nicht verfügbar
WNSC2D401200W6Q WNSC2D401200W.pdf
WNSC2D401200W6Q
Hersteller: WeEn Semiconductors
Description: WNSC2D401200W/TO247-2L/STANDARD
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2068pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
SOD6.5CAX SOD%20Series_19.pdf
Hersteller: WeEn Semiconductors
Description: SOD6.5CA/SOD123/REEL 7" Q1/T1 *
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.27V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
SMDJ43AJ SMDJ%20Series_17.pdf
SMDJ43AJ
Hersteller: WeEn Semiconductors
Description: SMDJ43A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.2V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ45AJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ45A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ45AJ SMBJ%20Series_132.pdf
Hersteller: WeEn Semiconductors
Description: SMBJ45A/SMB/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMBJ17CAJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ17CA/SMB/REEL 13" Q1/T1 *S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ17CAJ SMBJ%20Series_132.pdf
Hersteller: WeEn Semiconductors
Description: SMBJ17CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.08V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
ACTT6X-800CNQ actt6x-800cn.pdf
ACTT6X-800CNQ
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
P6SMBJ40AJ P6SMBJ%20Series.pdf
Hersteller: WeEn Semiconductors
Description: P6SMBJ40A/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ64CAJ SMAJ%20Series%5B63%5D_48.pdf
Hersteller: WeEn Semiconductors
Description: SMAJ64CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.6V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ45CAJ SMAJ%20Series%5B63%5D_48.pdf
Hersteller: WeEn Semiconductors
Description: SMAJ45CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.4V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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