| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VJ1210Y476KXQTW1BC | VISHAY |
 Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 47uF; 10V; X7R; ±10%; SMD; 1210 Type of capacitor: ceramic Operating temperature: -55...125°C Capacitance: 47µF Operating voltage: 10V Mounting: SMD Tolerance: ±10% Dielectric: X7R Case - mm: 3225 Case - inch: 1210 |
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CRCW04022K20JNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 2.2kΩ; 62.5mW; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 2.2kΩ Power: 62.5mW Tolerance: ±5% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
auf Bestellung 8706 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06031M80FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 1.8MΩ; 0.1W; ±1%; -55÷155°C Resistance: 1.8MΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...155°C Tolerance: ±1% Type of resistor: thick film Power: 0.1W Max. operating voltage: 75V |
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CRCW06033K74FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.74kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.74kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06033K83FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.83kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.83kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06033K92FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.92kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.92kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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TS63Y101KT20 | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 100Ω; 250mW; SMD Type of potentiometer: mounting Kind of potentiometer: horizontal; multiturn Resistance: 100Ω Power: 0.25W Mounting: SMD Tolerance: ±10% Temperature coefficient: 100ppm/°C Characteristics: linear Track material: cermet Operating temperature: -55...155°C Body dimensions: 6.85x6.85x5mm Number of electrical turns: 13 ±2 Max. operating voltage: 250V IP rating: IP67 Number of mechanical turns: 15 ±5 Torque: 1,5Ncm |
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TS63Y202K | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 250mW; SMD Type of potentiometer: mounting Kind of potentiometer: horizontal; multiturn Resistance: 2kΩ Power: 0.25W Mounting: SMD Tolerance: ±10% Track material: cermet |
Produkt ist nicht verfügbar |
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TS63Y503KT20 | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 50kΩ; 250mW; SMD Type of potentiometer: mounting Kind of potentiometer: horizontal; multiturn Resistance: 50kΩ Power: 0.25W Mounting: SMD Tolerance: ±10% Temperature coefficient: 100ppm/°C Characteristics: linear Track material: cermet Operating temperature: -55...155°C Body dimensions: 6.85x6.85x5mm Number of electrical turns: 13 ±2 Max. operating voltage: 250V IP rating: IP67 Number of mechanical turns: 15 ±5 Torque: 1,5Ncm |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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TS63Y502KT20 | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 5kΩ; 250mW; SMD Type of potentiometer: mounting Kind of potentiometer: horizontal; multiturn Resistance: 5kΩ Power: 0.25W Mounting: SMD Tolerance: ±10% Temperature coefficient: 100ppm/°C Characteristics: linear Track material: cermet Operating temperature: -55...155°C Body dimensions: 6.85x6.85x5mm Number of electrical turns: 13 ±2 Max. operating voltage: 250V IP rating: IP67 Number of mechanical turns: 15 ±5 Torque: 1,5Ncm |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SML4746-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±10% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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SML4746A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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GSOT12C-E3-08 | VISHAY |
Category: Transil diodes - arrays Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Peak pulse power dissipation: 337W Max. off-state voltage: 12V Breakdown voltage: 15V Max. forward impulse current: 12A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 2 |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFI720GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
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| IRFI730GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.7A Pulsed drain current: 15A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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| VO3150A | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5.3kV Case: DIP8 Conform to the norm: UL Turn-on time: 0.1µs Turn-off time: 0.1µs Max. off-state voltage: 5V Manufacturer series: VO3150 |
Produkt ist nicht verfügbar |
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MBB02070C3929FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film Power: 0.6W Resistance: 39.2Ω |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| Si4408DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4408DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4420BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4420BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4421DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4421DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4423DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4423DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4425FDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18.3A Pulsed drain current: -70A Power dissipation: 4.8W Case: SO8 On-state resistance: 16mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4426DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.5A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4434ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W Mounting: SMD Kind of package: reel; tape Power dissipation: 6W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.17Ω Drain current: 4.1A Drain-source voltage: 250V Case: SO8 Gate charge: 16.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A |
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| SI4434DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4434DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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SI4436DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 25A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
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SI4436DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.8A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| Si4442DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI4442DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4447ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.2A Pulsed drain current: -20A Power dissipation: 4.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4447DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.5A Pulsed drain current: -30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±16V On-state resistance: 72mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| BFC237086104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 100nF; 63VAC; 100VDC; 5mm; ±5%; 2.5x6.5x7.2mm Type of capacitor: polyester Capacitance: 0.1µF Operating voltage: 63V AC; 100V DC Tolerance: ±5% Mounting: THT Terminal pitch: 5mm Operating temperature: -55...85°C Body dimensions: 2.5x6.5x7.2mm Leads dimensions: L 5mm |
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BFC237075104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 100nF; 40VAC; 63VDC; 5mm; ±10%; 7.2x2.5x6.5mm Mounting: THT Operating temperature: -55...85°C Terminal pitch: 5mm Tolerance: ±10% Body dimensions: 7.2x2.5x6.5mm Max. operating voltage: 40V AC; 63V DC Type of capacitor: polyester Capacitance: 0.1µF Climate class: 55/100/56 |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-243NQ100PBF | VISHAY |
Category: Diode modules Description: Module: diode; single diode; 100V; If: 240A; D67,HALF-PAK; screw Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 240A Case: D67; HALF-PAK Max. forward voltage: 0.72V Max. forward impulse current: 3.3kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805Y223JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805Y223KXAMC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805Y223KXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805Y223KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 22nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206Y333KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 33nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1210Y333KXATW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1210 Type of capacitor: ceramic Capacitance: 33nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1210 Case - mm: 3225 Operating temperature: -55...125°C |
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RS1K-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 7pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 5418 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1KHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 7pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
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VOT8121AM-VT | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver; SOP4 Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: without zero voltage crossing driver Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
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VOT8121AM-T | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac; without zero voltage crossing driver Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
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VOT8121AM-T2 | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac; without zero voltage crossing driver Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs |
Produkt ist nicht verfügbar |
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VOT8121AM-VT2 | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac; without zero voltage crossing driver Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs Conform to the norm: VDE |
Produkt ist nicht verfügbar |
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SUD50P10-43L-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W Drain-source voltage: -100V Drain current: -37.1A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 95W Polarisation: unipolar Kind of package: reel; tape Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: DPAK; TO252 |
Produkt ist nicht verfügbar |
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SUD50P10-43L-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W Drain-source voltage: -100V Drain current: -36.4A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 72.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: DPAK; TO252 |
Produkt ist nicht verfügbar |
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PR02000202009JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 20Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 20Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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293D336X96R3A2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 6.3V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
Produkt ist nicht verfügbar |
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293D336X96R3C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 6.3V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
Produkt ist nicht verfügbar |
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| SI5419DU-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A Kind of package: reel; tape Pulsed drain current: -40A Power dissipation: 31W Gate charge: 45nC Polarisation: unipolar Technology: TrenchFET® Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
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| IRFI9610GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Pulsed drain current: -8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFI9620GPBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3A Pulsed drain current: -12A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFIZ48GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 726 Stücke: Lieferzeit 14-21 Tag (e) |
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| VJ1210Y476KXQTW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47uF; 10V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Operating temperature: -55...125°C
Capacitance: 47µF
Operating voltage: 10V
Mounting: SMD
Tolerance: ±10%
Dielectric: X7R
Case - mm: 3225
Case - inch: 1210
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47uF; 10V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Operating temperature: -55...125°C
Capacitance: 47µF
Operating voltage: 10V
Mounting: SMD
Tolerance: ±10%
Dielectric: X7R
Case - mm: 3225
Case - inch: 1210
Produkt ist nicht verfügbar
| CRCW04022K20JNTDBC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 2.2kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 2.2kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 2.2kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 2.2kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
auf Bestellung 8706 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4700+ | 0.015 EUR |
| CRCW06031M80FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 1.8MΩ; 0.1W; ±1%; -55÷155°C
Resistance: 1.8MΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Power: 0.1W
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 1.8MΩ; 0.1W; ±1%; -55÷155°C
Resistance: 1.8MΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Power: 0.1W
Max. operating voltage: 75V
Produkt ist nicht verfügbar
| CRCW06033K74FKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.74kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.74kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.74kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.74kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1400+ | 0.051 EUR |
| CRCW06033K83FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.83kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.83kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.83kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.83kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| CRCW06033K92FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.92kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.92kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.92kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.92kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 700+ | 0.1 EUR |
| TS63Y101KT20 |
|
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 100Ω; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 100Ω
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 100Ω; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 100Ω
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
Produkt ist nicht verfügbar
| TS63Y202K |
|
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 2kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Track material: cermet
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 2kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Track material: cermet
Produkt ist nicht verfügbar
| TS63Y503KT20 |
|
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 50kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 50kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 50kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 50kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.75 EUR |
| 26+ | 2.79 EUR |
| 28+ | 2.63 EUR |
| TS63Y502KT20 |
|
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 5kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 5kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 5kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 5kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.53 EUR |
| 17+ | 4.28 EUR |
| 25+ | 2.96 EUR |
| 26+ | 2.8 EUR |
| SML4746-E3/61 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
| SML4746A-E3/61 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
| GSOT12C-E3-08 |
|
Hersteller: VISHAY
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 337W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 12A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 337W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 12A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 2
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 680+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 795+ | 0.09 EUR |
| 860+ | 0.084 EUR |
| IRFI720GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFI730GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| VO3150A |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3150
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3150
Produkt ist nicht verfügbar
| MBB02070C3929FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39.2Ω
Category: THT Resistors
Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39.2Ω
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| Si4408DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4408DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4420BDY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4420BDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4421DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4421DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4423DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4423DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4425FDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4426DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4434ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.17Ω
Drain current: 4.1A
Drain-source voltage: 250V
Case: SO8
Gate charge: 16.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.17Ω
Drain current: 4.1A
Drain-source voltage: 250V
Case: SO8
Gate charge: 16.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Produkt ist nicht verfügbar
| SI4434DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4434DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4436DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4436DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.8A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.8A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| Si4442DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4442DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4447ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 129+ | 0.56 EUR |
| 143+ | 0.5 EUR |
| 180+ | 0.4 EUR |
| 190+ | 0.38 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.36 EUR |
| SI4447DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BFC237086104 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 63VAC; 100VDC; 5mm; ±5%; 2.5x6.5x7.2mm
Type of capacitor: polyester
Capacitance: 0.1µF
Operating voltage: 63V AC; 100V DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -55...85°C
Body dimensions: 2.5x6.5x7.2mm
Leads dimensions: L 5mm
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 63VAC; 100VDC; 5mm; ±5%; 2.5x6.5x7.2mm
Type of capacitor: polyester
Capacitance: 0.1µF
Operating voltage: 63V AC; 100V DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -55...85°C
Body dimensions: 2.5x6.5x7.2mm
Leads dimensions: L 5mm
Produkt ist nicht verfügbar
| BFC237075104 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 40VAC; 63VDC; 5mm; ±10%; 7.2x2.5x6.5mm
Mounting: THT
Operating temperature: -55...85°C
Terminal pitch: 5mm
Tolerance: ±10%
Body dimensions: 7.2x2.5x6.5mm
Max. operating voltage: 40V AC; 63V DC
Type of capacitor: polyester
Capacitance: 0.1µF
Climate class: 55/100/56
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 40VAC; 63VDC; 5mm; ±10%; 7.2x2.5x6.5mm
Mounting: THT
Operating temperature: -55...85°C
Terminal pitch: 5mm
Tolerance: ±10%
Body dimensions: 7.2x2.5x6.5mm
Max. operating voltage: 40V AC; 63V DC
Type of capacitor: polyester
Capacitance: 0.1µF
Climate class: 55/100/56
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 230+ | 0.32 EUR |
| 430+ | 0.17 EUR |
| 650+ | 0.11 EUR |
| 690+ | 0.1 EUR |
| VS-243NQ100PBF |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; single diode; 100V; If: 240A; D67,HALF-PAK; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 240A
Case: D67; HALF-PAK
Max. forward voltage: 0.72V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; single diode; 100V; If: 240A; D67,HALF-PAK; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 240A
Case: D67; HALF-PAK
Max. forward voltage: 0.72V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 53.91 EUR |
| VJ0805Y223JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y223KXAMC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y223KXAPW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y223KXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3600+ | 0.02 EUR |
| 4000+ | 0.018 EUR |
| 6100+ | 0.012 EUR |
| 6500+ | 0.011 EUR |
| 6900+ | 0.01 EUR |
| VJ1206Y333KXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ1210Y333KXATW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| RS1K-E3/61T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 5418 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 516+ | 0.14 EUR |
| 697+ | 0.1 EUR |
| 920+ | 0.078 EUR |
| 971+ | 0.074 EUR |
| RS1KHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| VOT8121AM-VT |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver; SOP4
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver; SOP4
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
| VOT8121AM-T |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
| VOT8121AM-T2 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
| VOT8121AM-VT2 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Conform to the norm: VDE
Produkt ist nicht verfügbar
| SUD50P10-43L-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Drain-source voltage: -100V
Drain current: -37.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Drain-source voltage: -100V
Drain current: -37.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Produkt ist nicht verfügbar
| SUD50P10-43L-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Drain-source voltage: -100V
Drain current: -36.4A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 72.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Drain-source voltage: -100V
Drain current: -36.4A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 72.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Produkt ist nicht verfügbar
| PR02000202009JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 20Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 20Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 20Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 20Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| 293D336X96R3A2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| 293D336X96R3C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| SI5419DU-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Produkt ist nicht verfügbar
| IRFI9610GPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFI9620GPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFIZ48GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 726 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.83 EUR |
| 44+ | 1.64 EUR |
| 49+ | 1.47 EUR |
| 57+ | 1.26 EUR |
| 60+ | 1.2 EUR |