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SSM6J511NU,LF SSM6J511NU,LF Toshiba Semiconductor and Storage SSM6J511NU_datasheet_en_20170418.pdf?did=30767&prodName=SSM6J511NU Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.2 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
SSM3K116TU,LF SSM3K116TU,LF Toshiba Semiconductor and Storage SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU Description: MOSFET N-CH 30V 2.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SSM3K16FU,LF SSM3K16FU,LF Toshiba Semiconductor and Storage SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU Description: MOSFET N-CH 20V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.078 EUR
6000+ 0.073 EUR
9000+ 0.06 EUR
Mindestbestellmenge: 3000
SSM3J15FU,LF SSM3J15FU,LF Toshiba Semiconductor and Storage SSM3J15FU_datasheet_en_20140301.pdf?did=22747&prodName=SSM3J15FU Description: MOSFET P-CH 30V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.067 EUR
6000+ 0.06 EUR
9000+ 0.056 EUR
15000+ 0.052 EUR
21000+ 0.05 EUR
30000+ 0.047 EUR
Mindestbestellmenge: 3000
SSM3J15FV,L3F SSM3J15FV,L3F Toshiba Semiconductor and Storage SSM3J15FV_datasheet_en_20171011.pdf?did=593&prodName=SSM3J15FV Description: MOSFET P-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.055 EUR
16000+ 0.049 EUR
Mindestbestellmenge: 8000
TCR2EF20,LM(CT TCR2EF20,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 2V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2DG15,LF TCR2DG15,LF Toshiba Semiconductor and Storage docget.jsp?did=14028&prodName=TCR2DG12 Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
TC7PZ07FU,LJ(CT TC7PZ07FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
TC7PZ17FU,LJ(CT TC7PZ17FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+ 0.091 EUR
9000+ 0.085 EUR
15000+ 0.079 EUR
21000+ 0.075 EUR
30000+ 0.072 EUR
Mindestbestellmenge: 3000
74VHCV245FT(BJ) 74VHCV245FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
TC7USB3212WBG(ELAH TC7USB3212WBG(ELAH Toshiba Semiconductor and Storage Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Circuit: 4 x 1:2
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 2-WCSP (2x1.6)
Produkt ist nicht verfügbar
DF2B36FU,H3F DF2B36FU,H3F Toshiba Semiconductor and Storage DF2B36FU_datasheet_en_20210625.pdf?did=36248&prodName=DF2B36FU Description: TVS DIODE 28VWM 40VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 16737 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
DF3D36FU,LF DF3D36FU,LF Toshiba Semiconductor and Storage DF3D36FU_Web.pdf Description: ESD PROTECTION DIODE (BI-DIRECTI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM3K72CFS,LF SSM3K72CFS,LF Toshiba Semiconductor and Storage SSM3K72CFS_datasheet_en_20161117.pdf?did=35826&prodName=SSM3K72CFS Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 199630 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
112+ 0.16 EUR
182+ 0.097 EUR
500+ 0.07 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 72
SSM3K72KCT,L3F SSM3K72KCT,L3F Toshiba Semiconductor and Storage SSM3K72KCT_datasheet_en_20201124.pdf?did=35719&prodName=SSM3K72KCT Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 49940 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
91+ 0.2 EUR
145+ 0.12 EUR
500+ 0.089 EUR
1000+ 0.078 EUR
2000+ 0.069 EUR
5000+ 0.059 EUR
Mindestbestellmenge: 56
SSM3K7002KF,LF SSM3K7002KF,LF Toshiba Semiconductor and Storage SSM3K7002KF_datasheet_en_20210528.pdf?did=35718&prodName=SSM3K7002KF Description: MOSFET N-CH 60V 400MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 44193 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
Mindestbestellmenge: 35
SSM3K341R,LF SSM3K341R,LF Toshiba Semiconductor and Storage SSM3K341R_DS.pdf Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 5320 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
27+ 0.67 EUR
100+ 0.43 EUR
500+ 0.33 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 17
TCK107AF,LF TCK107AF,LF Toshiba Semiconductor and Storage TCK108AF_datasheet_en_20151229.pdf?did=53240&prodName=TCK108AF Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
auf Bestellung 14885 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
28+ 0.64 EUR
34+ 0.53 EUR
100+ 0.4 EUR
250+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 17
SSM6N61NU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
SSM6J511NU,LF SSM6J511NU,LF Toshiba Semiconductor and Storage SSM6J511NU_datasheet_en_20170418.pdf?did=30767&prodName=SSM6J511NU Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 14961 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
30+ 0.59 EUR
100+ 0.38 EUR
500+ 0.29 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 19
SSM3K116TU,LF SSM3K116TU,LF Toshiba Semiconductor and Storage SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU Description: MOSFET N-CH 30V 2.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
auf Bestellung 39100 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
27+ 0.67 EUR
100+ 0.4 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 21
SSM3K16FU,LF SSM3K16FU,LF Toshiba Semiconductor and Storage SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 29064 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
56+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.09 EUR
Mindestbestellmenge: 39
SSM3J15FU,LF SSM3J15FU,LF Toshiba Semiconductor and Storage SSM3J15FU_datasheet_en_20140301.pdf?did=22747&prodName=SSM3J15FU Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 67825 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
87+ 0.2 EUR
140+ 0.13 EUR
500+ 0.092 EUR
1000+ 0.081 EUR
Mindestbestellmenge: 53
SSM3J15FV,L3F SSM3J15FV,L3F Toshiba Semiconductor and Storage SSM3J15FV_datasheet_en_20171011.pdf?did=593&prodName=SSM3J15FV Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 21276 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
91+ 0.19 EUR
146+ 0.12 EUR
500+ 0.088 EUR
1000+ 0.077 EUR
2000+ 0.069 EUR
Mindestbestellmenge: 56
TCR2EF20,LM(CT TCR2EF20,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
59+ 0.3 EUR
72+ 0.25 EUR
100+ 0.19 EUR
250+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 36
TCR2DG15,LF TCR2DG15,LF Toshiba Semiconductor and Storage docget.jsp?did=14028&prodName=TCR2DG12 Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
TC7PZ07FU,LJ(CT TC7PZ07FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
auf Bestellung 6746 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
56+ 0.32 EUR
69+ 0.26 EUR
100+ 0.19 EUR
250+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
TC7PZ17FU,LJ(CT TC7PZ17FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
auf Bestellung 44259 Stücke:
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33+0.55 EUR
56+ 0.32 EUR
69+ 0.26 EUR
100+ 0.19 EUR
250+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
74VHCV245FT(BJ) 74VHCV245FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
DF3D36FU,LF DF3D36FU,LF Toshiba Semiconductor and Storage DF3D36FU_Web.pdf Description: ESD PROTECTION DIODE (BI-DIRECTI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM6N61NU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
74VHCV245FT(BJ) 74VHCV245FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
TBD62064AFG,EL TBD62064AFG,EL Toshiba Semiconductor and Storage TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.11 EUR
Mindestbestellmenge: 1500
1SS389,L3F 1SS389,L3F Toshiba Semiconductor and Storage 1SS389_datasheet_en_20140301.pdf?did=3371&prodName=1SS389 Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.048 EUR
16000+ 0.043 EUR
24000+ 0.041 EUR
40000+ 0.038 EUR
Mindestbestellmenge: 8000
1SS389,L3F 1SS389,L3F Toshiba Semiconductor and Storage 1SS389_datasheet_en_20140301.pdf?did=3371&prodName=1SS389 Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 44374 Stücke:
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63+0.28 EUR
102+ 0.17 EUR
164+ 0.11 EUR
500+ 0.078 EUR
1000+ 0.069 EUR
2000+ 0.061 EUR
Mindestbestellmenge: 63
TBD62064AFG,EL TBD62064AFG,EL Toshiba Semiconductor and Storage TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 32014 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+ 1.85 EUR
25+ 1.56 EUR
100+ 1.24 EUR
250+ 1.11 EUR
Mindestbestellmenge: 6
TLP184(GB,SE TLP184(GB,SE Toshiba Semiconductor and Storage TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
34+ 0.53 EUR
125+ 0.35 EUR
Mindestbestellmenge: 22
SSM6L16FETE85LF SSM6L16FETE85LF Toshiba Semiconductor and Storage docget.jsp?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Produkt ist nicht verfügbar
SSM6L16FETE85LF SSM6L16FETE85LF Toshiba Semiconductor and Storage docget.jsp?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
TLP2703(E TLP2703(E Toshiba Semiconductor and Storage docget.jsp?did=15216&prodName=TLP2703 Description: OPTOISO 5KV DARLINGTON SO6L
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.47V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 900% @ 500µA
Current Transfer Ratio (Max): 8000% @ 500µA
Supplier Device Package: 6-SO
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
13+ 1.46 EUR
100+ 1.08 EUR
Mindestbestellmenge: 8
TLP2703(TP,E TLP2703(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV DARLINGTON SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.47V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 900% @ 500µA
Current Transfer Ratio (Max): 8000% @ 500µA
Supplier Device Package: 6-SO
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.84 EUR
3000+ 0.8 EUR
Mindestbestellmenge: 1500
TLP2703(TP,E TLP2703(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV DARLINGTON SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.47V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 900% @ 500µA
Current Transfer Ratio (Max): 8000% @ 500µA
Supplier Device Package: 6-SO
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
12+ 1.5 EUR
100+ 1.11 EUR
500+ 1.02 EUR
Mindestbestellmenge: 8
TPHR6503PL,L1Q TPHR6503PL,L1Q Toshiba Semiconductor and Storage TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.35 EUR
Mindestbestellmenge: 5000
TPN3R704PL,L1Q TPN3R704PL,L1Q Toshiba Semiconductor and Storage TPN3R704PL_datasheet_en_20191030.pdf?did=30643&prodName=TPN3R704PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.43 EUR
10000+ 0.4 EUR
Mindestbestellmenge: 5000
TPN2R304PL,L1Q TPN2R304PL,L1Q Toshiba Semiconductor and Storage TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.51 EUR
10000+ 0.48 EUR
Mindestbestellmenge: 5000
TPH3R704PL,L1Q TPH3R704PL,L1Q Toshiba Semiconductor and Storage TPH3R704PL_datasheet_en_20191030.pdf?did=30712&prodName=TPH3R704PL Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.5 EUR
10000+ 0.47 EUR
Mindestbestellmenge: 5000
TPHR6503PL,L1Q TPHR6503PL,L1Q Toshiba Semiconductor and Storage TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 34906 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
10+ 2.86 EUR
100+ 1.97 EUR
500+ 1.59 EUR
1000+ 1.46 EUR
2000+ 1.36 EUR
Mindestbestellmenge: 4
TPN3R704PL,L1Q TPN3R704PL,L1Q Toshiba Semiconductor and Storage TPN3R704PL_datasheet_en_20191030.pdf?did=30643&prodName=TPN3R704PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 17483 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
16+ 1.12 EUR
100+ 0.74 EUR
500+ 0.57 EUR
1000+ 0.52 EUR
2000+ 0.47 EUR
Mindestbestellmenge: 10
TPN2R304PL,L1Q TPN2R304PL,L1Q Toshiba Semiconductor and Storage TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 26314 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
14+ 1.31 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.61 EUR
2000+ 0.56 EUR
Mindestbestellmenge: 9
TPH3R704PL,L1Q TPH3R704PL,L1Q Toshiba Semiconductor and Storage TPH3R704PL_datasheet_en_20191030.pdf?did=30712&prodName=TPH3R704PL Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 100276 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+ 1.29 EUR
100+ 0.86 EUR
500+ 0.67 EUR
1000+ 0.61 EUR
2000+ 0.56 EUR
Mindestbestellmenge: 9
TC35662IXBG(EL) Toshiba Semiconductor and Storage Description: IC RF TXRX+MCU BLUETOOTH
Produkt ist nicht verfügbar
TC35662IXBG(EL) Toshiba Semiconductor and Storage Description: IC RF TXRX+MCU BLUETOOTH
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
1SS396,LF 1SS396,LF Toshiba Semiconductor and Storage 1SS396_datasheet_en_20230615.pdf?did=3384&prodName=1SS396 Description: DIODE ARR SCHOTT 40V 70MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+ 0.099 EUR
9000+ 0.094 EUR
Mindestbestellmenge: 3000
SSM3K361R,LF SSM3K361R,LF Toshiba Semiconductor and Storage SSM3K361R_datasheet_en_20221007.pdf?did=36685&prodName=SSM3K361R Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+ 0.25 EUR
9000+ 0.24 EUR
15000+ 0.23 EUR
21000+ 0.22 EUR
Mindestbestellmenge: 3000
TBAS16,LM TBAS16,LM Toshiba Semiconductor and Storage TBAS16_TBAW56_TBAV70.pdf Description: DIODE GEN PURP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.054 EUR
Mindestbestellmenge: 3000
TBAT54C,LM TBAT54C,LM Toshiba Semiconductor and Storage TBAT54_datasheet_en_20171117.pdf?did=37137&prodName=TBAT54 Description: DIODE ARR SCHOTT 30V 140MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 140mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.054 EUR
Mindestbestellmenge: 3000
TBAT54S,LM TBAT54S,LM Toshiba Semiconductor and Storage TBAT54_datasheet_en_20171117.pdf?did=37137&prodName=TBAT54 Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.053 EUR
6000+ 0.047 EUR
9000+ 0.044 EUR
15000+ 0.041 EUR
21000+ 0.039 EUR
30000+ 0.037 EUR
Mindestbestellmenge: 3000
TBAV70,LM TBAV70,LM Toshiba Semiconductor and Storage TBAS16_TBAW56_TBAV70.pdf Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 351000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.044 EUR
6000+ 0.039 EUR
9000+ 0.037 EUR
15000+ 0.034 EUR
21000+ 0.032 EUR
30000+ 0.031 EUR
75000+ 0.028 EUR
Mindestbestellmenge: 3000
TBAW56,LM TBAW56,LM Toshiba Semiconductor and Storage TBAS16_TBAW56_TBAV70.pdf Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.054 EUR
6000+ 0.048 EUR
9000+ 0.045 EUR
Mindestbestellmenge: 3000
1SS396,LF 1SS396,LF Toshiba Semiconductor and Storage 1SS396_datasheet_en_20230615.pdf?did=3384&prodName=1SS396 Description: DIODE ARR SCHOTT 40V 70MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 17350 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
56+ 0.32 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 34
SSM6J511NU,LF SSM6J511NU_datasheet_en_20170418.pdf?did=30767&prodName=SSM6J511NU
SSM6J511NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.2 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
SSM3K116TU,LF SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU
SSM3K116TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SSM3K16FU,LF SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU
SSM3K16FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.078 EUR
6000+ 0.073 EUR
9000+ 0.06 EUR
Mindestbestellmenge: 3000
SSM3J15FU,LF SSM3J15FU_datasheet_en_20140301.pdf?did=22747&prodName=SSM3J15FU
SSM3J15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.067 EUR
6000+ 0.06 EUR
9000+ 0.056 EUR
15000+ 0.052 EUR
21000+ 0.05 EUR
30000+ 0.047 EUR
Mindestbestellmenge: 3000
SSM3J15FV,L3F SSM3J15FV_datasheet_en_20171011.pdf?did=593&prodName=SSM3J15FV
SSM3J15FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.055 EUR
16000+ 0.049 EUR
Mindestbestellmenge: 8000
TCR2EF20,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2DG15,LF docget.jsp?did=14028&prodName=TCR2DG12
TCR2DG15,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
TC7PZ07FU,LJ(CT TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU
TC7PZ07FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
Mindestbestellmenge: 3000
TC7PZ17FU,LJ(CT TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU
TC7PZ17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.091 EUR
9000+ 0.085 EUR
15000+ 0.079 EUR
21000+ 0.075 EUR
30000+ 0.072 EUR
Mindestbestellmenge: 3000
74VHCV245FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT
74VHCV245FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
TC7USB3212WBG(ELAH
TC7USB3212WBG(ELAH
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Circuit: 4 x 1:2
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 2-WCSP (2x1.6)
Produkt ist nicht verfügbar
DF2B36FU,H3F DF2B36FU_datasheet_en_20210625.pdf?did=36248&prodName=DF2B36FU
DF2B36FU,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 40VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 16737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
DF3D36FU,LF DF3D36FU_Web.pdf
DF3D36FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM3K72CFS,LF SSM3K72CFS_datasheet_en_20161117.pdf?did=35826&prodName=SSM3K72CFS
SSM3K72CFS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 199630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+0.25 EUR
112+ 0.16 EUR
182+ 0.097 EUR
500+ 0.07 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 72
SSM3K72KCT,L3F SSM3K72KCT_datasheet_en_20201124.pdf?did=35719&prodName=SSM3K72KCT
SSM3K72KCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 49940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
91+ 0.2 EUR
145+ 0.12 EUR
500+ 0.089 EUR
1000+ 0.078 EUR
2000+ 0.069 EUR
5000+ 0.059 EUR
Mindestbestellmenge: 56
SSM3K7002KF,LF SSM3K7002KF_datasheet_en_20210528.pdf?did=35718&prodName=SSM3K7002KF
SSM3K7002KF,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 44193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
Mindestbestellmenge: 35
SSM3K341R,LF SSM3K341R_DS.pdf
SSM3K341R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 5320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
27+ 0.67 EUR
100+ 0.43 EUR
500+ 0.33 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 17
TCK107AF,LF TCK108AF_datasheet_en_20151229.pdf?did=53240&prodName=TCK108AF
TCK107AF,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
auf Bestellung 14885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
28+ 0.64 EUR
34+ 0.53 EUR
100+ 0.4 EUR
250+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 17
SSM6N61NU,LF docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
SSM6J511NU,LF SSM6J511NU_datasheet_en_20170418.pdf?did=30767&prodName=SSM6J511NU
SSM6J511NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 14961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
30+ 0.59 EUR
100+ 0.38 EUR
500+ 0.29 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 19
SSM3K116TU,LF SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU
SSM3K116TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
auf Bestellung 39100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
27+ 0.67 EUR
100+ 0.4 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 21
SSM3K16FU,LF SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU
SSM3K16FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 29064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
56+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.09 EUR
Mindestbestellmenge: 39
SSM3J15FU,LF SSM3J15FU_datasheet_en_20140301.pdf?did=22747&prodName=SSM3J15FU
SSM3J15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 67825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
87+ 0.2 EUR
140+ 0.13 EUR
500+ 0.092 EUR
1000+ 0.081 EUR
Mindestbestellmenge: 53
SSM3J15FV,L3F SSM3J15FV_datasheet_en_20171011.pdf?did=593&prodName=SSM3J15FV
SSM3J15FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 21276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
91+ 0.19 EUR
146+ 0.12 EUR
500+ 0.088 EUR
1000+ 0.077 EUR
2000+ 0.069 EUR
Mindestbestellmenge: 56
TCR2EF20,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
59+ 0.3 EUR
72+ 0.25 EUR
100+ 0.19 EUR
250+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 36
TCR2DG15,LF docget.jsp?did=14028&prodName=TCR2DG12
TCR2DG15,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
TC7PZ07FU,LJ(CT TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU
TC7PZ07FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
auf Bestellung 6746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
56+ 0.32 EUR
69+ 0.26 EUR
100+ 0.19 EUR
250+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
TC7PZ17FU,LJ(CT TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU
TC7PZ17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
auf Bestellung 44259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
56+ 0.32 EUR
69+ 0.26 EUR
100+ 0.19 EUR
250+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
74VHCV245FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT
74VHCV245FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
DF3D36FU,LF DF3D36FU_Web.pdf
DF3D36FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SSM6N61NU,LF docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
74VHCV245FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT
74VHCV245FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
TBD62064AFG,EL TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG
TBD62064AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.11 EUR
Mindestbestellmenge: 1500
1SS389,L3F 1SS389_datasheet_en_20140301.pdf?did=3371&prodName=1SS389
1SS389,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.048 EUR
16000+ 0.043 EUR
24000+ 0.041 EUR
40000+ 0.038 EUR
Mindestbestellmenge: 8000
1SS389,L3F 1SS389_datasheet_en_20140301.pdf?did=3371&prodName=1SS389
1SS389,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 44374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
102+ 0.17 EUR
164+ 0.11 EUR
500+ 0.078 EUR
1000+ 0.069 EUR
2000+ 0.061 EUR
Mindestbestellmenge: 63
TBD62064AFG,EL TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG
TBD62064AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 32014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.94 EUR
10+ 1.85 EUR
25+ 1.56 EUR
100+ 1.24 EUR
250+ 1.11 EUR
Mindestbestellmenge: 6
TLP184(GB,SE TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE
TLP184(GB,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
34+ 0.53 EUR
125+ 0.35 EUR
Mindestbestellmenge: 22
SSM6L16FETE85LF docget.jsp?did=1226&prodName=SSM6L16FE
SSM6L16FETE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Produkt ist nicht verfügbar
SSM6L16FETE85LF docget.jsp?did=1226&prodName=SSM6L16FE
SSM6L16FETE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
TLP2703(E docget.jsp?did=15216&prodName=TLP2703
TLP2703(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV DARLINGTON SO6L
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.47V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 900% @ 500µA
Current Transfer Ratio (Max): 8000% @ 500µA
Supplier Device Package: 6-SO
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.32 EUR
13+ 1.46 EUR
100+ 1.08 EUR
Mindestbestellmenge: 8
TLP2703(TP,E
TLP2703(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV DARLINGTON SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.47V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 900% @ 500µA
Current Transfer Ratio (Max): 8000% @ 500µA
Supplier Device Package: 6-SO
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.84 EUR
3000+ 0.8 EUR
Mindestbestellmenge: 1500
TLP2703(TP,E
TLP2703(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV DARLINGTON SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.47V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 900% @ 500µA
Current Transfer Ratio (Max): 8000% @ 500µA
Supplier Device Package: 6-SO
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.38 EUR
12+ 1.5 EUR
100+ 1.11 EUR
500+ 1.02 EUR
Mindestbestellmenge: 8
TPHR6503PL,L1Q TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL
TPHR6503PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.35 EUR
Mindestbestellmenge: 5000
TPN3R704PL,L1Q TPN3R704PL_datasheet_en_20191030.pdf?did=30643&prodName=TPN3R704PL
TPN3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.43 EUR
10000+ 0.4 EUR
Mindestbestellmenge: 5000
TPN2R304PL,L1Q TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL
TPN2R304PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.51 EUR
10000+ 0.48 EUR
Mindestbestellmenge: 5000
TPH3R704PL,L1Q TPH3R704PL_datasheet_en_20191030.pdf?did=30712&prodName=TPH3R704PL
TPH3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.5 EUR
10000+ 0.47 EUR
Mindestbestellmenge: 5000
TPHR6503PL,L1Q TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL
TPHR6503PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 34906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.42 EUR
10+ 2.86 EUR
100+ 1.97 EUR
500+ 1.59 EUR
1000+ 1.46 EUR
2000+ 1.36 EUR
Mindestbestellmenge: 4
TPN3R704PL,L1Q TPN3R704PL_datasheet_en_20191030.pdf?did=30643&prodName=TPN3R704PL
TPN3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 17483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
16+ 1.12 EUR
100+ 0.74 EUR
500+ 0.57 EUR
1000+ 0.52 EUR
2000+ 0.47 EUR
Mindestbestellmenge: 10
TPN2R304PL,L1Q TPN2R304PL_datasheet_en_20191018.pdf?did=30264&prodName=TPN2R304PL
TPN2R304PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 26314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.08 EUR
14+ 1.31 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.61 EUR
2000+ 0.56 EUR
Mindestbestellmenge: 9
TPH3R704PL,L1Q TPH3R704PL_datasheet_en_20191030.pdf?did=30712&prodName=TPH3R704PL
TPH3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 100276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
14+ 1.29 EUR
100+ 0.86 EUR
500+ 0.67 EUR
1000+ 0.61 EUR
2000+ 0.56 EUR
Mindestbestellmenge: 9
TC35662IXBG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH
Produkt ist nicht verfügbar
TC35662IXBG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
1SS396,LF 1SS396_datasheet_en_20230615.pdf?did=3384&prodName=1SS396
1SS396,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 70MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.099 EUR
9000+ 0.094 EUR
Mindestbestellmenge: 3000
SSM3K361R,LF SSM3K361R_datasheet_en_20221007.pdf?did=36685&prodName=SSM3K361R
SSM3K361R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.25 EUR
9000+ 0.24 EUR
15000+ 0.23 EUR
21000+ 0.22 EUR
Mindestbestellmenge: 3000
TBAS16,LM TBAS16_TBAW56_TBAV70.pdf
TBAS16,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.054 EUR
Mindestbestellmenge: 3000
TBAT54C,LM TBAT54_datasheet_en_20171117.pdf?did=37137&prodName=TBAT54
TBAT54C,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 140MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 140mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.054 EUR
Mindestbestellmenge: 3000
TBAT54S,LM TBAT54_datasheet_en_20171117.pdf?did=37137&prodName=TBAT54
TBAT54S,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.053 EUR
6000+ 0.047 EUR
9000+ 0.044 EUR
15000+ 0.041 EUR
21000+ 0.039 EUR
30000+ 0.037 EUR
Mindestbestellmenge: 3000
TBAV70,LM TBAS16_TBAW56_TBAV70.pdf
TBAV70,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 351000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.044 EUR
6000+ 0.039 EUR
9000+ 0.037 EUR
15000+ 0.034 EUR
21000+ 0.032 EUR
30000+ 0.031 EUR
75000+ 0.028 EUR
Mindestbestellmenge: 3000
TBAW56,LM TBAS16_TBAW56_TBAV70.pdf
TBAW56,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.054 EUR
6000+ 0.048 EUR
9000+ 0.045 EUR
Mindestbestellmenge: 3000
1SS396,LF 1SS396_datasheet_en_20230615.pdf?did=3384&prodName=1SS396
1SS396,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 70MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 17350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
56+ 0.32 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 34
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