Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13264) > Seite 106 nach 222
Foto | Bezeichnung | Hersteller | Beschreibung |
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DF2S6.2CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S7MSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 60W Power Line Protection: No |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D18FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USM Bidirectional Channels: 2 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 24VC UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UF6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: Yes |
Produkt ist nicht verfügbar |
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SSM3J338R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
auf Bestellung 343700 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.4A CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
auf Bestellung 170000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM3K72CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3C Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J512NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 10A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
Produkt ist nicht verfügbar |
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SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
Produkt ist nicht verfügbar |
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SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 342000 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS302A,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 13066 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS307E,L3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC79 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 6pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-79 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 80 V |
auf Bestellung 70571 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS413CT,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA SOD882 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: CST2 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
auf Bestellung 39880 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B18FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
auf Bestellung 26868 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B29FU,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC USC |
auf Bestellung 27850 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S10FS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 8V FSC |
auf Bestellung 11520 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S12FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 9VWM 18.5VC SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Voltage - Reverse Standoff (Typ): 9V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 18.5V Power Line Protection: No |
auf Bestellung 21312 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S16FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Power Line Protection: No |
auf Bestellung 48573 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S20CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No Part Status: Active |
auf Bestellung 14415 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S20FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No |
auf Bestellung 29889 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S24FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 19V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Power Line Protection: No |
auf Bestellung 44083 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S30CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7.2pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No Part Status: Active |
auf Bestellung 9010 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S30FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No |
auf Bestellung 62632 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S5.1FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
auf Bestellung 25805 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S5.6FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
auf Bestellung 53323 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S6.2CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
auf Bestellung 106044 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S7MSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 60W Power Line Protection: No |
auf Bestellung 20813 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D18FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USM Bidirectional Channels: 2 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
auf Bestellung 16576 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC |
auf Bestellung 5914 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D6.8MS,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 11VC SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SSM Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: Yes |
auf Bestellung 24395 Stücke: Lieferzeit 10-14 Tag (e) |
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DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 24VC UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UF6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: Yes |
Produkt ist nicht verfügbar |
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SSM3J338R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
auf Bestellung 345734 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 45323 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.4A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
auf Bestellung 186498 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
auf Bestellung 11060 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K72CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3C Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 10005 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J512NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
auf Bestellung 2561 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
auf Bestellung 4160 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 345697 Stücke: Lieferzeit 10-14 Tag (e) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC |
auf Bestellung 5914 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3906(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PHVOLT SO6 Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 12µA Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 300µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3906(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PHVOLT SO6 Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 12µA Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 300µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 22058 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
Produkt ist nicht verfügbar |
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TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
auf Bestellung 5414 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
auf Bestellung 9795 Stücke: Lieferzeit 10-14 Tag (e) |
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74LCX157FT(AJ) | Toshiba Semiconductor and Storage | Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP |
Produkt ist nicht verfügbar |
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74VHC393FT | Toshiba Semiconductor and Storage |
Description: IC BIN COUNTER DL 4BIT 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-TSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 115 MHz Number of Bits per Element: 4 |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP7920(F | Toshiba Semiconductor and Storage |
Description: IC OPAMP ISOLATION 1 CIRC 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Amplifier Type: Isolation Operating Temperature: -40°C ~ 105°C Current - Supply: 12mA Current - Input Bias: 55 nA Voltage - Input Offset: 730 µV Supplier Device Package: 8-DIP Part Status: Active Number of Circuits: 1 -3db Bandwidth: 230 kHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP7820(TP4,E | Toshiba Semiconductor and Storage |
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Differential Mounting Type: Surface Mount Amplifier Type: Isolation Operating Temperature: -40°C ~ 105°C Current - Supply: 12mA Current - Input Bias: 5.5 nA Voltage - Input Offset: 900 µV Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 1 -3db Bandwidth: 230 kHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP7820(TP4,E | Toshiba Semiconductor and Storage |
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Differential Mounting Type: Surface Mount Amplifier Type: Isolation Operating Temperature: -40°C ~ 105°C Current - Supply: 12mA Current - Input Bias: 5.5 nA Voltage - Input Offset: 900 µV Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 1 -3db Bandwidth: 230 kHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 4494 Stücke: Lieferzeit 10-14 Tag (e) |
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TB67B000HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP Packaging: Tray Package / Case: 30-PowerDIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -30°C ~ 115°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Applications: General Purpose Technology: IGBT Voltage - Load: 50V ~ 450V Supplier Device Package: 30-HDIP Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
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TLP2745(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP2748(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP2745(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 13569 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP2748(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 7792 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC164D | Toshiba Semiconductor and Storage |
Description: IC SHIFT REGISTER 8BIT 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 14-SOP Part Status: Active Number of Bits per Element: 8 |
auf Bestellung 38644 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S6.2CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.043 EUR |
20000+ | 0.039 EUR |
30000+ | 0.037 EUR |
50000+ | 0.034 EUR |
70000+ | 0.033 EUR |
DF2S7MSL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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10000+ | 0.058 EUR |
DF3D18FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
9000+ | 0.16 EUR |
15000+ | 0.15 EUR |
DF3D29FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)DF6F6.8MTU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Produkt ist nicht verfügbar
SSM3J338R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 343700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.15 EUR |
15000+ | 0.14 EUR |
21000+ | 0.13 EUR |
75000+ | 0.12 EUR |
SSM3J356R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.12 EUR |
15000+ | 0.11 EUR |
30000+ | 0.1 EUR |
SSM3K56ACT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.085 EUR |
SSM3K56MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K72CTC,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.069 EUR |
SSM6J512NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Produkt ist nicht verfügbar
SSM6K504NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Produkt ist nicht verfügbar
SSM6N7002KFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 342000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.065 EUR |
6000+ | 0.058 EUR |
9000+ | 0.055 EUR |
15000+ | 0.051 EUR |
21000+ | 0.048 EUR |
30000+ | 0.046 EUR |
75000+ | 0.041 EUR |
150000+ | 0.038 EUR |
300000+ | 0.036 EUR |
1SS302A,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 13066 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.3 EUR |
98+ | 0.18 EUR |
157+ | 0.11 EUR |
500+ | 0.082 EUR |
1000+ | 0.072 EUR |
1SS307E,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 70571 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
91+ | 0.19 EUR |
154+ | 0.11 EUR |
251+ | 0.07 EUR |
500+ | 0.051 EUR |
1000+ | 0.045 EUR |
2000+ | 0.039 EUR |
1SS413CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 39880 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
77+ | 0.23 EUR |
124+ | 0.14 EUR |
500+ | 0.1 EUR |
1000+ | 0.092 EUR |
2000+ | 0.082 EUR |
5000+ | 0.07 EUR |
DF2B18FU,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 26868 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
47+ | 0.38 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
DF2B29FU,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Description: TVS DIODE 24VWM 47VC USC
auf Bestellung 27850 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
40+ | 0.45 EUR |
100+ | 0.26 EUR |
500+ | 0.17 EUR |
1000+ | 0.13 EUR |
DF2S10FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8V FSC
Description: TVS DIODE 8V FSC
auf Bestellung 11520 Stücke:
Lieferzeit 10-14 Tag (e)DF2S12FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
auf Bestellung 21312 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S16FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
auf Bestellung 48573 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S20CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14415 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
112+ | 0.16 EUR |
182+ | 0.097 EUR |
500+ | 0.07 EUR |
1000+ | 0.062 EUR |
2000+ | 0.055 EUR |
5000+ | 0.047 EUR |
DF2S20FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
auf Bestellung 29889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S24FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
auf Bestellung 44083 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S30CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
auf Bestellung 9010 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
61+ | 0.29 EUR |
112+ | 0.16 EUR |
500+ | 0.097 EUR |
1000+ | 0.066 EUR |
2000+ | 0.056 EUR |
5000+ | 0.051 EUR |
DF2S30FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
auf Bestellung 62632 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S5.1FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
auf Bestellung 25805 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S5.6FS,L3M |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 53323 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
117+ | 0.15 EUR |
188+ | 0.094 EUR |
500+ | 0.068 EUR |
1000+ | 0.06 EUR |
2000+ | 0.053 EUR |
5000+ | 0.045 EUR |
DF2S6.2CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 106044 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 0.26 EUR |
109+ | 0.16 EUR |
177+ | 0.1 EUR |
500+ | 0.073 EUR |
1000+ | 0.064 EUR |
2000+ | 0.056 EUR |
5000+ | 0.048 EUR |
DF2S7MSL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 20813 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
58+ | 0.31 EUR |
118+ | 0.15 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
2000+ | 0.075 EUR |
5000+ | 0.07 EUR |
DF3D18FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 16576 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
35+ | 0.51 EUR |
100+ | 0.32 EUR |
500+ | 0.24 EUR |
1000+ | 0.22 EUR |
DF3D29FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
auf Bestellung 5914 Stücke:
Lieferzeit 10-14 Tag (e)DF3D6.8MS,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
auf Bestellung 24395 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
83+ | 0.21 EUR |
133+ | 0.13 EUR |
500+ | 0.097 EUR |
1000+ | 0.086 EUR |
DF6F6.8MTU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Produkt ist nicht verfügbar
SSM3J338R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 345734 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
38+ | 0.47 EUR |
100+ | 0.3 EUR |
500+ | 0.22 EUR |
1000+ | 0.2 EUR |
SSM3J356R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 45323 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
45+ | 0.4 EUR |
100+ | 0.25 EUR |
500+ | 0.19 EUR |
1000+ | 0.17 EUR |
SSM3K56ACT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 186498 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
34+ | 0.52 EUR |
100+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.13 EUR |
SSM3K56MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 11060 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
50+ | 0.36 EUR |
100+ | 0.23 EUR |
500+ | 0.17 EUR |
1000+ | 0.15 EUR |
2000+ | 0.13 EUR |
SSM3K72CTC,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10005 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
41+ | 0.44 EUR |
100+ | 0.23 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
2000+ | 0.094 EUR |
5000+ | 0.081 EUR |
SSM6J512NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
43+ | 0.41 EUR |
100+ | 0.25 EUR |
500+ | 0.23 EUR |
1000+ | 0.16 EUR |
SSM6K504NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
auf Bestellung 4160 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
35+ | 0.51 EUR |
100+ | 0.35 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
SSM6N7002KFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 345697 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
90+ | 0.2 EUR |
144+ | 0.12 EUR |
500+ | 0.09 EUR |
1000+ | 0.079 EUR |
DF3D29FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
auf Bestellung 5914 Stücke:
Lieferzeit 10-14 Tag (e)TLP3906(TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.04 EUR |
6000+ | 1 EUR |
9000+ | 0.98 EUR |
15000+ | 0.96 EUR |
TLP3906(TPL,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 22058 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.08 EUR |
10+ | 1.98 EUR |
100+ | 1.42 EUR |
500+ | 1.19 EUR |
1000+ | 1.12 EUR |
TPH1R204PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Produkt ist nicht verfügbar
TPH1R005PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.31 EUR |
TPH1R204PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 5414 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.31 EUR |
10+ | 2.11 EUR |
100+ | 1.43 EUR |
500+ | 1.14 EUR |
1000+ | 1.04 EUR |
2000+ | 0.96 EUR |
TPH1R005PL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
auf Bestellung 9795 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.33 EUR |
10+ | 2.8 EUR |
100+ | 1.92 EUR |
500+ | 1.55 EUR |
1000+ | 1.43 EUR |
2000+ | 1.33 EUR |
74LCX157FT(AJ) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
Produkt ist nicht verfügbar
74VHC393FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.22 EUR |
5000+ | 0.2 EUR |
7500+ | 0.18 EUR |
12500+ | 0.17 EUR |
25000+ | 0.16 EUR |
TLP7920(F |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRC 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 55 nA
Voltage - Input Offset: 730 µV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ISOLATION 1 CIRC 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 55 nA
Voltage - Input Offset: 730 µV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.86 EUR |
10+ | 6.92 EUR |
TLP7820(TP4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 4.43 EUR |
3000+ | 4.31 EUR |
TLP7820(TP4,E |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4494 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.66 EUR |
10+ | 6.77 EUR |
100+ | 5.29 EUR |
500+ | 4.7 EUR |
TB67B000HG |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP
Packaging: Tray
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP
Packaging: Tray
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
TLP2745(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.65 EUR |
3000+ | 0.62 EUR |
4500+ | 0.6 EUR |
7500+ | 0.58 EUR |
10500+ | 0.57 EUR |
TLP2748(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.65 EUR |
3000+ | 0.62 EUR |
TLP2745(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 13569 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
14+ | 1.27 EUR |
100+ | 0.88 EUR |
500+ | 0.72 EUR |
TLP2748(TP,E |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 7792 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
16+ | 1.17 EUR |
100+ | 0.86 EUR |
500+ | 0.79 EUR |
74HC164D |
Hersteller: Toshiba Semiconductor and Storage
Description: IC SHIFT REGISTER 8BIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOP
Part Status: Active
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8BIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 38644 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
25+ | 0.73 EUR |
30+ | 0.6 EUR |
100+ | 0.46 EUR |
250+ | 0.39 EUR |
500+ | 0.34 EUR |
1000+ | 0.31 EUR |