Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (24030) > Seite 49 nach 401
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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P6SMB36AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30.8VWM 49.9VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB43A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36.8V 59.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB43AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36.8V 59.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB43CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36.8V 59.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB43CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36.8V 59.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB47A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 40.2V 64.8V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB47AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 40.2V 64.8V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB56A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 47.8V 77V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB56AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 47.8V 77V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB56CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 47.8V 77V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB56CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 47.8V 77V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB6.8A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 5.8VWM 10.5VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB6.8AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 60A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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P6SMB6.8CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 5.8V 10.5V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB6.8CAHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 60A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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P6SMB62CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 53VWM 85VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB62CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 53VWM 85VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB68A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 58.1VWM 92VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB68AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 58.1VWM 92VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB68CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 58.1VWM 92VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB68CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 58.1VWM 92VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB7.5A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 6.4V 11.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB7.5AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 55A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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P6SMB7.5CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 6.4V 11.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB7.5CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 6.4V 11.3V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB75A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64.1VWM 103VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB75AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64.1VWM 103VC DO214AA |
Produkt ist nicht verfügbar |
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P6SMB8.2A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7.02V 12.1V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB8.2AHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7.02V 12.1V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB82CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70.1V 113V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB82CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70.1V 113V DO214AA |
Produkt ist nicht verfügbar |
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RS1B M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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RS1BHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RS1BL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 100V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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RS1BL MHG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 800MA SUBSMA |
Produkt ist nicht verfügbar |
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RS1BLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 100V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RS1BLHMHG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 800MA SUBSMA |
Produkt ist nicht verfügbar |
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RS1D M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
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RS1DHM2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
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RS1K M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1A DO214AC |
Produkt ist nicht verfügbar |
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RS1KHM2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1A DO214AC |
Produkt ist nicht verfügbar |
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RS1KL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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RS1KL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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RS2D M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 2A DO214AA |
Produkt ist nicht verfügbar |
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RS2J M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 2A DO214AA |
Produkt ist nicht verfügbar |
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RS2JA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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RS2JAHM2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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RS2K M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 2A DO214AA |
Produkt ist nicht verfügbar |
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RS2KA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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RS2KAHM2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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RS2M M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 2A DO214AA |
Produkt ist nicht verfügbar |
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RS2MA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1.5A DO214AC |
Produkt ist nicht verfügbar |
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RS2MAHM2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1.5A DO214AC |
Produkt ist nicht verfügbar |
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S1BB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A DO214AA |
Produkt ist nicht verfügbar |
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S1GB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A DO214AA |
Produkt ist nicht verfügbar |
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S2D M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 2A DO214AA |
Produkt ist nicht verfügbar |
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S2DHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 2A DO214AA |
Produkt ist nicht verfügbar |
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S2JA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1.5A DO214AC |
Produkt ist nicht verfügbar |
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S2K M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 2A DO214AA |
Produkt ist nicht verfügbar |
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S2KA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1.5A DO214AC |
Produkt ist nicht verfügbar |
P6SMB36AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Description: TVS DIODE 30.8VWM 49.9VC DO214AA
Produkt ist nicht verfügbar
P6SMB43A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
P6SMB43AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
P6SMB43CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
P6SMB43CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8V 59.3V DO214AA
Description: TVS DIODE 36.8V 59.3V DO214AA
Produkt ist nicht verfügbar
P6SMB47A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO214AA
Description: TVS DIODE 40.2V 64.8V DO214AA
Produkt ist nicht verfügbar
P6SMB47AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO214AA
Description: TVS DIODE 40.2V 64.8V DO214AA
Produkt ist nicht verfügbar
P6SMB56A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8V 77V DO214AA
Description: TVS DIODE 47.8V 77V DO214AA
Produkt ist nicht verfügbar
P6SMB56AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8V 77V DO214AA
Description: TVS DIODE 47.8V 77V DO214AA
Produkt ist nicht verfügbar
P6SMB56CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8V 77V DO214AA
Description: TVS DIODE 47.8V 77V DO214AA
Produkt ist nicht verfügbar
P6SMB56CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8V 77V DO214AA
Description: TVS DIODE 47.8V 77V DO214AA
Produkt ist nicht verfügbar
P6SMB6.8A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Produkt ist nicht verfügbar
P6SMB6.8AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6SMB6.8CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8V 10.5V DO214AA
Description: TVS DIODE 5.8V 10.5V DO214AA
Produkt ist nicht verfügbar
P6SMB6.8CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6SMB62CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Description: TVS DIODE 53VWM 85VC DO214AA
Produkt ist nicht verfügbar
P6SMB62CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO214AA
Description: TVS DIODE 53VWM 85VC DO214AA
Produkt ist nicht verfügbar
P6SMB68A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AA
Description: TVS DIODE 58.1VWM 92VC DO214AA
Produkt ist nicht verfügbar
P6SMB68AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AA
Description: TVS DIODE 58.1VWM 92VC DO214AA
Produkt ist nicht verfügbar
P6SMB68CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AA
Description: TVS DIODE 58.1VWM 92VC DO214AA
Produkt ist nicht verfügbar
P6SMB68CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AA
Description: TVS DIODE 58.1VWM 92VC DO214AA
Produkt ist nicht verfügbar
P6SMB7.5A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4V 11.3V DO214AA
Description: TVS DIODE 6.4V 11.3V DO214AA
Produkt ist nicht verfügbar
P6SMB7.5AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 55A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 55A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6SMB7.5CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4V 11.3V DO214AA
Description: TVS DIODE 6.4V 11.3V DO214AA
Produkt ist nicht verfügbar
P6SMB7.5CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4V 11.3V DO214AA
Description: TVS DIODE 6.4V 11.3V DO214AA
Produkt ist nicht verfügbar
P6SMB75A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AA
Description: TVS DIODE 64.1VWM 103VC DO214AA
Produkt ist nicht verfügbar
P6SMB75AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AA
Description: TVS DIODE 64.1VWM 103VC DO214AA
Produkt ist nicht verfügbar
P6SMB8.2A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AA
Description: TVS DIODE 7.02V 12.1V DO214AA
Produkt ist nicht verfügbar
P6SMB8.2AHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AA
Description: TVS DIODE 7.02V 12.1V DO214AA
Produkt ist nicht verfügbar
P6SMB82CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1V 113V DO214AA
Description: TVS DIODE 70.1V 113V DO214AA
Produkt ist nicht verfügbar
P6SMB82CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1V 113V DO214AA
Description: TVS DIODE 70.1V 113V DO214AA
Produkt ist nicht verfügbar
RS1B M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS1BHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RS1BL M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
RS1BL MHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
RS1BLHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RS1BLHMHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
Description: DIODE GEN PURP 100V 800MA SUBSMA
Produkt ist nicht verfügbar
RS1D M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
RS1DHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
RS1K M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
RS1KHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Description: DIODE GEN PURP 800V 1A DO214AC
Produkt ist nicht verfügbar
RS1KL M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS1KL MHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS2D M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
RS2J M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
Produkt ist nicht verfügbar
RS2JA M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Description: DIODE GEN PURP 600V 1.5A DO214AC
Produkt ist nicht verfügbar
RS2JAHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Description: DIODE GEN PURP 600V 1.5A DO214AC
Produkt ist nicht verfügbar
RS2K M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Description: DIODE GEN PURP 800V 2A DO214AA
Produkt ist nicht verfügbar
RS2KA M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar
RS2KAHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar
RS2M M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 2A DO214AA
Description: DIODE GEN PURP 2A DO214AA
Produkt ist nicht verfügbar
RS2MA M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Description: DIODE GEN PURP 1.5A DO214AC
Produkt ist nicht verfügbar
RS2MAHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Description: DIODE GEN PURP 1.5A DO214AC
Produkt ist nicht verfügbar
S1BB M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AA
Description: DIODE GEN PURP 100V 1A DO214AA
Produkt ist nicht verfügbar
S1GB M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
Produkt ist nicht verfügbar
S2D M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
S2DHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Description: DIODE GEN PURP 200V 2A DO214AA
Produkt ist nicht verfügbar
S2JA M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Description: DIODE GEN PURP 600V 1.5A DO214AC
Produkt ist nicht verfügbar
S2K M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Description: DIODE GEN PURP 800V 2A DO214AA
Produkt ist nicht verfügbar
S2KA M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
Produkt ist nicht verfügbar