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SMBJ18H SMBJ18H Taiwan Semiconductor Corporation pdf.php?pn=SMBJ18H Description: 600W, 22.2V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ18 SMBJ18 Taiwan Semiconductor Corporation pdf.php?pn=SMBJ18 Description: 600W, 22.2V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ18CH SMBJ18CH Taiwan Semiconductor Corporation pdf.php?pn=SMBJ18CH Description: 600W, 22.2V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ18C SMBJ18C Taiwan Semiconductor Corporation pdf.php?pn=SMBJ18C Description: 600W, 22.2V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ24 SMCJ24 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 29.7V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ24 SMCJ24 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 29.7V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.2 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
SMCJ20 SMCJ20 Taiwan Semiconductor Corporation pdf.php?pn=SMCJ20 Description: 1500W, 24.7V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ20 SMCJ20 Taiwan Semiconductor Corporation pdf.php?pn=SMCJ20 Description: 1500W, 24.7V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
HER106G HER106G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 23
HER106GH HER106GH Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 23
SF28GH SF28GH Taiwan Semiconductor Corporation SF21G SERIES_H2105.pdf Description: DIODE GEN PURP 600V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3485 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
40+ 0.44 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
BAV99W RFG BAV99W RFG Taiwan Semiconductor Corporation BAV99W_C2102.pdf Description: DIODE ARRAY GP 75V 150MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 85 V
Produkt ist nicht verfügbar
BAV99W RFG BAV99W RFG Taiwan Semiconductor Corporation BAV99W_C2102.pdf Description: DIODE ARRAY GP 75V 150MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 85 V
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
74+ 0.24 EUR
136+ 0.13 EUR
500+ 0.1 EUR
Mindestbestellmenge: 53
BC847AW RFG BC847AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 45V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
6000+ 0.055 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 3000
BC847AW RFG BC847AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 45V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 17860 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
75+ 0.24 EUR
138+ 0.13 EUR
500+ 0.1 EUR
1000+ 0.07 EUR
Mindestbestellmenge: 53
BC846A RFG BC846A RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
6000+ 0.047 EUR
9000+ 0.04 EUR
Mindestbestellmenge: 3000
BC846A RFG BC846A RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 65V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 14750 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
87+ 0.2 EUR
161+ 0.11 EUR
500+ 0.086 EUR
1000+ 0.06 EUR
Mindestbestellmenge: 59
BC846AW RFG BC846AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 65V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.059 EUR
6000+ 0.056 EUR
9000+ 0.048 EUR
Mindestbestellmenge: 3000
BC846AW RFG BC846AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 65V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
73+ 0.24 EUR
135+ 0.13 EUR
500+ 0.1 EUR
1000+ 0.072 EUR
Mindestbestellmenge: 53
BC846AW BC846AW Taiwan Semiconductor Corporation BC846AW%20SERIES_C2102.pdf Description: SOT-323, 80V, 0.1A, NPN BIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
1T4GH 1T4GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
1T5GH 1T5GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
1T7GH 1T7GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 1000V, STANDARD RECOVERY REC
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
1T6GH 1T6GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
F1T4GH F1T4GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 29
F1T5GH F1T5GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 29
F1T6GH F1T6GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.099 EUR
Mindestbestellmenge: 33
F1T7GH F1T7GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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SFT14GH SFT14GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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UG06AH UG06AH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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UG06BH UG06BH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 100V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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UG06CH UG06CH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 150V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
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UG06DH UG06DH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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HT17GH HT17GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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HT18GH HT18GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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HT14GH HT14GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 50NS, 1A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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HT15GH HT15GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SFT15GH SFT15GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 300V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
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SFT16GH SFT16GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SFT18GH SFT18GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SSL24H SSL24H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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SSL24 SSL24 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
TSM089N08LCR Taiwan Semiconductor Corporation Description: 80V, 67A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
Produkt ist nicht verfügbar
BAS40-05 RFG BAS40-05 RFG Taiwan Semiconductor Corporation BAS40 SERIES_H2001.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
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BAS40-05 RFG BAS40-05 RFG Taiwan Semiconductor Corporation BAS40 SERIES_H2001.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
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BYG20G BYG20G Taiwan Semiconductor Corporation BYG20D SERIES_F2102.pdf Description: DIODE GEN PURP 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 15000 Stücke:
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BYG20D BYG20D Taiwan Semiconductor Corporation pdf.php?pn=BYG20D Description: DIODE GEN PURP 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BYG20JH BYG20JH Taiwan Semiconductor Corporation BYG20DH SERIES_A2102.pdf Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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BYG20GH BYG20GH Taiwan Semiconductor Corporation BYG20DH SERIES_A2102.pdf Description: 75NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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BYG20DH BYG20DH Taiwan Semiconductor Corporation pdf.php?pn=BYG20DH Description: 75NS, 1.5A, 200V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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GBPC3501 T0G GBPC3501 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
GBPC3501M T0G GBPC3501M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 100V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
BC848A RFG BC848A RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 30V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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3000+0.052 EUR
6000+ 0.049 EUR
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BC848A RFG BC848A RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 30V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 8680 Stücke:
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500+ 0.09 EUR
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BC848AW RFG BC848AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 30V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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Mindestbestellmenge: 3000
BC848AW RFG BC848AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 30V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
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TS358CS RLG TS358CS RLG Taiwan Semiconductor Corporation TS358_B15.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 2500 Stücke:
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TS358CS RLG TS358CS RLG Taiwan Semiconductor Corporation TS358_B15.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 4923 Stücke:
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1N5223B A0G 1N5223B A0G Taiwan Semiconductor Corporation pdf.php?pn=1N5223B Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
MBRS20150CT-Y MBRS20150CT-Y Taiwan Semiconductor Corporation MBRS2045CT-Y SERIES_E2201.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
SMBJ18H pdf.php?pn=SMBJ18H
SMBJ18H
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 22.2V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ18 pdf.php?pn=SMBJ18
SMBJ18
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 22.2V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ18CH pdf.php?pn=SMBJ18CH
SMBJ18CH
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 22.2V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMBJ18C pdf.php?pn=SMBJ18C
SMBJ18C
Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 22.2V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ24 SMCJ SERIES_S2104.pdf
SMCJ24
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 29.7V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ24 SMCJ SERIES_S2104.pdf
SMCJ24
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 29.7V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2990 Stücke:
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Anzahl Preis ohne MwSt
13+1.37 EUR
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Mindestbestellmenge: 13
SMCJ20 pdf.php?pn=SMCJ20
SMCJ20
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 24.7V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ20 pdf.php?pn=SMCJ20
SMCJ20
Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 24.7V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
HER106G HER101G SERIES_L2104.pdf
HER106G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
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23+0.77 EUR
33+ 0.54 EUR
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HER106GH HER101G SERIES_L2104.pdf
HER106GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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23+0.77 EUR
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100+ 0.27 EUR
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SF28GH SF21G SERIES_H2105.pdf
SF28GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3485 Stücke:
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32+0.56 EUR
40+ 0.44 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
BAV99W RFG BAV99W_C2102.pdf
BAV99W RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 75V 150MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 85 V
Produkt ist nicht verfügbar
BAV99W RFG BAV99W_C2102.pdf
BAV99W RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 75V 150MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 85 V
auf Bestellung 590 Stücke:
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53+0.33 EUR
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BC847AW RFG BC846AW SERIES_C2102.pdf
BC847AW RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 15000 Stücke:
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3000+0.058 EUR
6000+ 0.055 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 3000
BC847AW RFG BC846AW SERIES_C2102.pdf
BC847AW RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 17860 Stücke:
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53+0.33 EUR
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BC846A RFG BC846A Series_I2001.pdf
BC846A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.05 EUR
6000+ 0.047 EUR
9000+ 0.04 EUR
Mindestbestellmenge: 3000
BC846A RFG BC846A Series_I2001.pdf
BC846A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 14750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
87+ 0.2 EUR
161+ 0.11 EUR
500+ 0.086 EUR
1000+ 0.06 EUR
Mindestbestellmenge: 59
BC846AW RFG BC846AW SERIES_C2102.pdf
BC846AW RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.059 EUR
6000+ 0.056 EUR
9000+ 0.048 EUR
Mindestbestellmenge: 3000
BC846AW RFG BC846AW SERIES_C2102.pdf
BC846AW RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
73+ 0.24 EUR
135+ 0.13 EUR
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1000+ 0.072 EUR
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BC846AW BC846AW%20SERIES_C2102.pdf
BC846AW
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-323, 80V, 0.1A, NPN BIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
1T4GH 1T1G SERIES_H2104.pdf
1T4GH
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 400V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
1T5GH 1T1G SERIES_H2104.pdf
1T5GH
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
1T7GH 1T1G SERIES_H2104.pdf
1T7GH
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD RECOVERY REC
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
1T6GH 1T1G SERIES_H2104.pdf
1T6GH
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 38
F1T4GH F1T1G SERIES_H2104.pdf
F1T4GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 29
F1T5GH F1T1G SERIES_H2104.pdf
F1T5GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 29
F1T6GH F1T1G SERIES_H2104.pdf
F1T6GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.099 EUR
Mindestbestellmenge: 33
F1T7GH F1T1G SERIES_H2104.pdf
F1T7GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.099 EUR
Mindestbestellmenge: 33
SFT14GH SFT11G SERIES_J2104.pdf
SFT14GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
46+ 0.39 EUR
100+ 0.24 EUR
500+ 0.18 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
UG06AH UG06A SERIES_G2104.pdf
UG06AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 24
UG06BH UG06A SERIES_G2104.pdf
UG06BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 24
UG06CH UG06A SERIES_G2104.pdf
UG06CH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 4350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
46+ 0.39 EUR
100+ 0.24 EUR
500+ 0.18 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
UG06DH UG06A SERIES_G2104.pdf
UG06DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 24
HT17GH HT11G SERIES_H2104.pdf
HT17GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
HT18GH HT11G SERIES_H2104.pdf
HT18GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
HT14GH HT11G SERIES_H2104.pdf
HT14GH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
HT15GH HT11G SERIES_H2104.pdf
HT15GH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 24
SFT15GH SFT11G SERIES_J2104.pdf
SFT15GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
35+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
SFT16GH SFT11G SERIES_J2104.pdf
SFT16GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
39+ 0.45 EUR
100+ 0.29 EUR
500+ 0.22 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 24
SFT18GH SFT11G SERIES_J2104.pdf
SFT18GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
35+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
SSL24H
SSL24H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
SSL24
SSL24
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
TSM089N08LCR
Hersteller: Taiwan Semiconductor Corporation
Description: 80V, 67A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
Produkt ist nicht verfügbar
BAS40-05 RFG BAS40 SERIES_H2001.pdf
BAS40-05 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.081 EUR
Mindestbestellmenge: 3000
BAS40-05 RFG BAS40 SERIES_H2001.pdf
BAS40-05 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
54+ 0.33 EUR
109+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.094 EUR
Mindestbestellmenge: 36
BYG20G BYG20D SERIES_F2102.pdf
BYG20G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
BYG20D pdf.php?pn=BYG20D
BYG20D
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 25
BYG20JH BYG20DH SERIES_A2102.pdf
BYG20JH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 25
BYG20GH BYG20DH SERIES_A2102.pdf
BYG20GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
BYG20DH pdf.php?pn=BYG20DH
BYG20DH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 200V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 25
GBPC3501 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3501 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
GBPC3501M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3501M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
BC848A RFG BC846A Series_I2001.pdf
BC848A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.052 EUR
6000+ 0.049 EUR
Mindestbestellmenge: 3000
BC848A RFG BC846A Series_I2001.pdf
BC848A RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 8680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
84+ 0.21 EUR
155+ 0.11 EUR
500+ 0.09 EUR
1000+ 0.062 EUR
Mindestbestellmenge: 59
BC848AW RFG BC846AW SERIES_C2102.pdf
BC848AW RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
6000+ 0.055 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 3000
BC848AW RFG BC846AW SERIES_C2102.pdf
BC848AW RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
75+ 0.24 EUR
138+ 0.13 EUR
500+ 0.1 EUR
1000+ 0.07 EUR
Mindestbestellmenge: 53
TS358CS RLG TS358_B15.pdf
TS358CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.25 EUR
Mindestbestellmenge: 2500
TS358CS RLG TS358_B15.pdf
TS358CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 4923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
31+ 0.58 EUR
100+ 0.46 EUR
250+ 0.43 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
1N5223B A0G pdf.php?pn=1N5223B
1N5223B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
MBRS20150CT-Y MBRS2045CT-Y SERIES_E2201.pdf
MBRS20150CT-Y
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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