Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (23929) > Seite 224 nach 399
Foto | Bezeichnung | Hersteller | Beschreibung |
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PGSMAJ7.0CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7VWM 12VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ7.0CAHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7VWM 12VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ7.0CA F2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7VWM 12VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ7.0CAHE3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7VWM 12VC DO214AC |
Produkt ist nicht verfügbar |
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ES1DL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1DL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 25572 Stücke: Lieferzeit 10-14 Tag (e) |
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SMF48AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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SMF48AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
auf Bestellung 835 Stücke: Lieferzeit 10-14 Tag (e) |
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SMF48AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1KSMB13AH | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1VWM 18.2VC DO214AA |
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1KSMB13CA | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1VWM 18.2VC DO214AA |
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1KSMB13CAH | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1VWM 18.2VC DO214AA |
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P6KE160CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 2.8A Voltage - Reverse Standoff (Typ): 136V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 152V Voltage - Clamping (Max) @ Ipp: 219V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMAJ20AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PGSMAJ20A F2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ20AHF4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ20A F3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
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PGSMAJ20A E2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PGSMAJ20A R2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
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PGSMAJ20A F4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ20A E3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PGSMAJ20AHF2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ20AHE2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PGSMAJ20AHE3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ20AHR2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AC |
Produkt ist nicht verfügbar |
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GBU15L05H | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU15L06H | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Discontinued at Digi-Key Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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GBU15L05 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU15L06 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 15A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR750 C0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 50V 7.5A TO220AC |
Produkt ist nicht verfügbar |
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MBR750HC0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 60V 7.5A TO220AC |
Produkt ist nicht verfügbar |
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1N4763AH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 91V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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P6KE400AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 342VWM 548VC DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 1.1A Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 548V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1SMA5933 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 17.5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA5933H | Taiwan Semiconductor Corporation | Description: DIODE ZENER 22V 1.5W DO214AC |
Produkt ist nicht verfügbar |
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
auf Bestellung 4220 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V |
auf Bestellung 4361 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
auf Bestellung 4965 Stücke: Lieferzeit 10-14 Tag (e) |
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SRT19 A0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 1A TS-1 |
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SRT19 R0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 1A TS-1 |
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SRT19 A1G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 1A TS-1 |
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SRT19HA1G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 1A TS-1 |
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SRT19HA0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 1A TS-1 |
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SRT19 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
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SRT19HR0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 90V 1A TS-1 |
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SRT19H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
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BYG23M | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55B62 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 62V 500MW DO35 |
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BZX55B39 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 39V 500MW DO35 |
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BZX55B3V0 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 3V 500MW DO35 |
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BZX55B33 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 33V 500MW DO35 |
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BZX55B8V2 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 8.2V 500MW DO35 |
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BZX55B18 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 18V 500MW DO35 |
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BZX55B22 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 22V 500MW DO35 |
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BZX55B13 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 13V 500MW DO35 |
Produkt ist nicht verfügbar |
PGSMAJ7.0CAHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Description: TVS DIODE 7VWM 12VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ7.0CAHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Description: TVS DIODE 7VWM 12VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ7.0CA F2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Description: TVS DIODE 7VWM 12VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ7.0CAHE3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Description: TVS DIODE 7VWM 12VC DO214AC
Produkt ist nicht verfügbar
ES1DL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.14 EUR |
ES1DL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 25572 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
38+ | 0.47 EUR |
100+ | 0.3 EUR |
500+ | 0.22 EUR |
1000+ | 0.2 EUR |
2000+ | 0.18 EUR |
5000+ | 0.16 EUR |
SMF48AHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF48AHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
26+ | 0.7 EUR |
100+ | 0.48 EUR |
500+ | 0.36 EUR |
SMF48AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
1KSMB13AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Produkt ist nicht verfügbar
1KSMB13CA |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Produkt ist nicht verfügbar
1KSMB13CAH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Produkt ist nicht verfügbar
P6KE160CAH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ20AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ20A F2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20AHF4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20A F3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20A E2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ20A R2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20A F4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20A E3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ20AHF2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20AHE2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ20AHE3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ20AHR2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
GBU15L05H |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.81 EUR |
20+ | 5.72 EUR |
100+ | 4.63 EUR |
500+ | 4.11 EUR |
1000+ | 3.52 EUR |
GBU15L06H |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GBU15L05 |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.48 EUR |
20+ | 5.45 EUR |
100+ | 4.41 EUR |
500+ | 3.92 EUR |
GBU15L06 |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.48 EUR |
20+ | 5.45 EUR |
100+ | 4.41 EUR |
500+ | 3.92 EUR |
MBR750 C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Produkt ist nicht verfügbar
MBR750HC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Produkt ist nicht verfügbar
1N4763AH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 91V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 91V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6KE400AH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA5933 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Description: DIODE ZENER 22V 1.5W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7500+ | 0.13 EUR |
1SMA5933H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
Produkt ist nicht verfügbar
TSM056NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.77 EUR |
TSM056NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.97 EUR |
10+ | 1.89 EUR |
100+ | 1.27 EUR |
500+ | 1.01 EUR |
1000+ | 0.92 EUR |
2000+ | 0.85 EUR |
TSM032NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.11 EUR |
TSM032NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.78 EUR |
10+ | 2.43 EUR |
100+ | 1.66 EUR |
500+ | 1.33 EUR |
1000+ | 1.22 EUR |
TSM070NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Produkt ist nicht verfügbar
TSM070NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
auf Bestellung 4361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.57 EUR |
11+ | 1.62 EUR |
100+ | 1.08 EUR |
500+ | 0.85 EUR |
1000+ | 0.78 EUR |
TSM019NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Produkt ist nicht verfügbar
TSM019NH04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 5.91 EUR |
10+ | 3.88 EUR |
100+ | 2.72 EUR |
500+ | 2.33 EUR |
1000+ | 2.06 EUR |
SRT19 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 A1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19HA1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19HA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
SRT19HR0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
Produkt ist nicht verfügbar
SRT19H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
Produkt ist nicht verfügbar
BYG23M |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7500+ | 0.13 EUR |
BZX55B62 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW DO35
Description: DIODE ZENER 62V 500MW DO35
Produkt ist nicht verfügbar
BZX55B39 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
BZX55B3V0 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW DO35
Description: DIODE ZENER 3V 500MW DO35
Produkt ist nicht verfügbar
BZX55B33 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
BZX55B8V2 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
Produkt ist nicht verfügbar
BZX55B18 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW DO35
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
BZX55B22 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
BZX55B13 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar