Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (24030) > Seite 146 nach 401
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PGSMAJ8.0CA F2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CA F3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CA R2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CAHE2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CAHE3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CAHF2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CAHF3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CAHR2G | Taiwan Semiconductor Corporation | Description: DIODE TVS 400W SMA |
Produkt ist nicht verfügbar |
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PGSMAJ8.0CA F4G | Taiwan Semiconductor Corporation | Description: DIODE TVS 400W SMA |
Produkt ist nicht verfügbar |
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HT12G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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HT13G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A TS-1 |
Produkt ist nicht verfügbar |
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HT14G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T2G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T2GHR0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T2G A1G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T2GHA1G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T2G A0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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F1T2GHA0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
Produkt ist nicht verfügbar |
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S1GM RSG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A MICRO SMA |
Produkt ist nicht verfügbar |
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S1GM RSG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A MICRO SMA |
Produkt ist nicht verfügbar |
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BZT55B43 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 43V 500MW MINI MELF |
Produkt ist nicht verfügbar |
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HS1KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1KFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1KFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
auf Bestellung 5028 Stücke: Lieferzeit 10-14 Tag (e) |
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SF1602PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 85pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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SS16 M2G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 60V 1A DO214AC |
Produkt ist nicht verfügbar |
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TUAS8K M3G | Taiwan Semiconductor Corporation | Description: 8A, 800V, STANDARD RECOVERY RECT |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TUAS8K M3G | Taiwan Semiconductor Corporation | Description: 8A, 800V, STANDARD RECOVERY RECT |
auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ36CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36VWM 58.1VC DO214AA |
Produkt ist nicht verfügbar |
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SMA6J17A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17VWM 26.7VC DO214AC |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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SMA6J17A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17VWM 26.7VC DO214AC |
auf Bestellung 3218 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA4738 M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 5 µA @ 6 V |
Produkt ist nicht verfügbar |
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BAT54SW RVG | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 30V 200MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
Produkt ist nicht verfügbar |
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MURF1620CT C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY GP 200V ITO-220AB |
Produkt ist nicht verfügbar |
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MURF1620CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 200V 16A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1SMA4755 M2G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 43V 1.25W DO214AC |
Produkt ist nicht verfügbar |
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BZV55B6V8 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 500MW MINI MELF Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: Mini MELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V |
Produkt ist nicht verfügbar |
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RS1JLS RVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 600V 1.2A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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RS1JLS RVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 600V 1.2A SOD123HE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDJ51A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 51V 82.4V DO214AB |
Produkt ist nicht verfügbar |
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TS6K80HD3G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 6A TS4K Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS4K Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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TS6KL60 D3G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 6A KBJL |
auf Bestellung 869 Stücke: Lieferzeit 10-14 Tag (e) |
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TS6K40 D3G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 6A TS4K Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS4K Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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TS6K40HD3G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 6A TS4K Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS4K Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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TS6K60HD3G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 6A TS4K Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS4K Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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SMB10J9.0CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9V 15.4V DO214AA |
Produkt ist nicht verfügbar |
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SMB10J36A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36V 58.1V DO214AA |
Produkt ist nicht verfügbar |
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SMB10J40A M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 40V 64.5V DO214AA |
Produkt ist nicht verfügbar |
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SMB10J36CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36V 58.1V DO214AA |
Produkt ist nicht verfügbar |
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SMB10J40CA M4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 40V 64.5V DO214AA |
Produkt ist nicht verfügbar |
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TSM1NB60CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 1A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM1NB60CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 1A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
auf Bestellung 7155 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM4NB60CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 4A TO252 |
Produkt ist nicht verfügbar |
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TSM4NB60CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 4A TO252 |
auf Bestellung 856 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX79B22 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 22V 500MW DO35 |
Produkt ist nicht verfügbar |
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P6SMB39A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.05V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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P6SMB39A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.05V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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P6SMB39CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.05V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
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P6SMB39CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.05V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
PGSMAJ8.0CA F2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CA F3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CA R2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHE2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHE3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHF2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHF3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHR2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Description: DIODE TVS 400W SMA
Produkt ist nicht verfügbar
PGSMAJ8.0CA F4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Description: DIODE TVS 400W SMA
Produkt ist nicht verfügbar
HT12G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
HT13G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
HT14G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A TS-1
Description: DIODE GEN PURP 300V 1A TS-1
Produkt ist nicht verfügbar
F1T2G R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHR0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2G A1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHA1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
S1GM RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Description: DIODE GEN PURP 400V 1A MICRO SMA
Produkt ist nicht verfügbar
S1GM RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Description: DIODE GEN PURP 400V 1A MICRO SMA
Produkt ist nicht verfügbar
BZT55B43 L1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Description: DIODE ZENER 43V 500MW MINI MELF
Produkt ist nicht verfügbar
HS1KAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)HS1KAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)HS1KFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)HS1KFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 5028 Stücke:
Lieferzeit 10-14 Tag (e)SF1602PT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SS16 M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO214AC
Description: DIODE SCHOTTKY 60V 1A DO214AC
Produkt ist nicht verfügbar
TUAS8K M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)TUAS8K M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)SMBJ36CAHM4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AA
Description: TVS DIODE 36VWM 58.1VC DO214AA
Produkt ist nicht verfügbar
SMA6J17A R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 0.68 EUR |
SMA6J17A R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 3218 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
14+ | 1.27 EUR |
100+ | 0.97 EUR |
500+ | 0.77 EUR |
1SMA4738 M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Produkt ist nicht verfügbar
BAT54SW RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
MURF1620CT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V ITO-220AB
Description: DIODE ARRAY GP 200V ITO-220AB
Produkt ist nicht verfügbar
MURF1620CTHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA4755 M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1.25W DO214AC
Description: DIODE ZENER 43V 1.25W DO214AC
Produkt ist nicht verfügbar
BZV55B6V8 L1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
RS1JLS RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS1JLS RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
29+ | 0.61 EUR |
100+ | 0.38 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
SMDJ51A R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51V 82.4V DO214AB
Description: TVS DIODE 51V 82.4V DO214AB
Produkt ist nicht verfügbar
TS6K80HD3G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
TS6KL60 D3G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)TS6K40 D3G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
TS6K40HD3G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
TS6K60HD3G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SMB10J9.0CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AA
Description: TVS DIODE 9V 15.4V DO214AA
Produkt ist nicht verfügbar
SMB10J36A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AA
Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
SMB10J40A M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40V 64.5V DO214AA
Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
SMB10J36CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AA
Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
SMB10J40CA M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40V 64.5V DO214AA
Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
TSM1NB60CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.42 EUR |
5000+ | 0.4 EUR |
TSM1NB60CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 7155 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.11 EUR |
19+ | 0.96 EUR |
100+ | 0.67 EUR |
500+ | 0.56 EUR |
1000+ | 0.47 EUR |
TSM4NB60CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Description: MOSFET N-CHANNEL 600V 4A TO252
Produkt ist nicht verfügbar
TSM4NB60CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Description: MOSFET N-CHANNEL 600V 4A TO252
auf Bestellung 856 Stücke:
Lieferzeit 10-14 Tag (e)BZX79B22 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
P6SMB39A R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
P6SMB39A R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
P6SMB39CA R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
P6SMB39CA R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar