Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (164751) > Seite 488 nach 2746
Foto | Bezeichnung | Hersteller | Beschreibung |
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M24LR04E-RUW20/2 | STMicroelectronics | Description: MEMORY |
Produkt ist nicht verfügbar |
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M24SR02-YSG12I/2 | STMicroelectronics |
Description: MEMORY Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Standards: ISO 14443, NFC Supplier Device Package: Wafer |
Produkt ist nicht verfügbar |
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M24SR04-GSG12I/2 | STMicroelectronics |
Description: 4-KBIT DYNAMIC NFC/RFID TAG NFC Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 5.5V Standards: ISO 14443, NFC Supplier Device Package: Wafer |
Produkt ist nicht verfügbar |
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M24SR64-YSG12I/2 | STMicroelectronics |
Description: MEMORY Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Standards: ISO 14443, NFC Supplier Device Package: Wafer |
Produkt ist nicht verfügbar |
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SCT30N120D2 | STMicroelectronics |
Description: SICFET N-CH 1200V 40A HIP247 Packaging: Tray Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V |
Produkt ist nicht verfügbar |
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SPC564L54L3CCFQR | STMicroelectronics |
Description: IC MCU 32BIT 768KB FLASH 100LQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 768KB (768K x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z4d Data Converters: A/D 32x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V Connectivity: CANbus, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Grade: Automotive Number of I/O: 57 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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SPC564L54L3CCFQY | STMicroelectronics |
Description: IC MCU 32BIT 768KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 768KB (768K x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z4d Data Converters: A/D 32x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V Connectivity: CANbus, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Grade: Automotive Number of I/O: 57 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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SPC564L60L5CCFQR | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z4d Data Converters: A/D 32x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V Connectivity: CANbus, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Grade: Automotive Number of I/O: 96 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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SPC564L60L5CCFQY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z4d Data Converters: A/D 32x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V Connectivity: CANbus, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Grade: Automotive Number of I/O: 96 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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ST1S15J28R | STMicroelectronics | Description: POWER MANAGEMENT |
Produkt ist nicht verfügbar |
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ST25DV04K-JFR6U3 | STMicroelectronics |
Description: 4-KBIT DYNAMIC NFC/RFID TAG NFC Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, NFC Supplier Device Package: Wafer |
Produkt ist nicht verfügbar |
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ST25R3911B-ASWB | STMicroelectronics |
Description: NFC / HF RFID READER IC Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Frequency: 13.56MHz Interface: SPI Type: RFID Reader Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.4V ~ 5.5V Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC Supplier Device Package: Wafer Part Status: Active |
Produkt ist nicht verfügbar |
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ST25R3913-AQWT | STMicroelectronics |
Description: NFC / HF RFID READER IC Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Interface: SPI Type: RFID Reader Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.4V ~ 5.5V Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC Supplier Device Package: 32-QFN (5x5) Part Status: Active |
Produkt ist nicht verfügbar |
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ST25R3915-AQWT | STMicroelectronics |
Description: NFC / HF RFID READER IC FOR AUTO Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Interface: SPI Type: RFID Reader Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 5.5V Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC Supplier Device Package: 32-QFN (5x5) Part Status: Active |
Produkt ist nicht verfügbar |
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STA369BWS | STMicroelectronics |
Description: 2.1-CHANNEL 40-W HIGH-EFFICIENCY Packaging: Tube Package / Case: 36-PowerBFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Fully Integrated Processor Interface: I²C, I²S Operating Temperature: -20°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 21.5V Applications: Pre-Amplifier Supplier Device Package: PowerSSO-36 EPD Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
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STA5630A | STMicroelectronics | Description: GPS/GALILEO RF FRONT-END |
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STA5630ATR | STMicroelectronics | Description: GPS/GALILEO RF FRONT-END |
Produkt ist nicht verfügbar |
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STA709A | STMicroelectronics |
Description: ADD INFOTAINMENT Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 108MHz Modulation or Protocol: AM, FM, RDS, SW-LW Data Interface: I2C, I2S, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.15V ~ 3.45V Current - Receiving: 340mA Supplier Device Package: 64-VFQFPN (9x9) Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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STA709ATR | STMicroelectronics |
Description: ADD INFOTAINMENT Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 108MHz Modulation or Protocol: AM, FM, RDS, SW-LW Data Interface: I2C, I2S, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.15V ~ 3.45V Current - Receiving: 340mA Supplier Device Package: 64-VFQFPN (9x9) Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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STAC0912-250 | STMicroelectronics | Description: 250W 36V 960-1215 MHZ LDMOS TRAN |
Produkt ist nicht verfügbar |
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STAC1011-350F | STMicroelectronics |
Description: RF MOSFET LDMOS STAC265B Packaging: Tube Package / Case: STAC265B Current Rating (Amps): 2µA Mounting Type: Chassis Mount Frequency: 1.03GHz ~ 1.09GHz Power - Output: 370W Gain: 15dB Technology: LDMOS Supplier Device Package: STAC265B Voltage - Rated: 80 V |
Produkt ist nicht verfügbar |
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STAC1214-250 | STMicroelectronics |
Description: RF MOSFET LDMOS STAC265B Packaging: Tube Package / Case: STAC265B Current Rating (Amps): 2µA Mounting Type: Chassis Mount Frequency: 1.2GHz ~ 1.4GHz Power - Output: 260W Gain: 14dB Technology: LDMOS Supplier Device Package: STAC265B Voltage - Rated: 80 V |
Produkt ist nicht verfügbar |
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STB22N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB33N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD6N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: D-PAK (TO-252) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD7N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF22N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 15A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF22N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 15A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF26N65DM2 | STMicroelectronics |
Description: MOSFET N-CH 650V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF33N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 25A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 555 Stücke: Lieferzeit 10-14 Tag (e) |
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STF35N65DM2 | STMicroelectronics |
Description: MOSFET N-CH 650V 32A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF6N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF7N65M6 | STMicroelectronics |
Description: MOSFET N-CH 650V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
Produkt ist nicht verfügbar |
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STFU14N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V |
Produkt ist nicht verfügbar |
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STFU25N60M2-EP | STMicroelectronics | Description: MOSFET N-CH 600V 18A TO220FP |
Produkt ist nicht verfügbar |
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STFU26N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V |
Produkt ist nicht verfügbar |
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STGIB10CH60S-E | STMicroelectronics |
Description: PTD HIGH VOLTAGE Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 15 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIB10CH60S-L | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 15 A Voltage: 600 V |
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STGIB10CH60TS-E | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 15 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIB15CH60S-L | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 20 A Voltage: 600 V |
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STGIB20M60S-L | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 25 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIB20M60TS-E | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 25 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIB20M60TS-L | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 25 A Voltage: 600 V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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STGIB30M60S-L | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 35 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIB30M60TS-E | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 35 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIB8CH60S-L | STMicroelectronics | Description: SLLIMM 2ND SERIES IPM, 3-PHASE I |
Produkt ist nicht verfügbar |
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STGIF10CH60TS-E | STMicroelectronics | Description: SLLIMM 2ND SERIES IPM, 3-PHASE I |
Produkt ist nicht verfügbar |
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STGIF5CH60TS-E | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Active Current: 8 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGIF7CH60TS-E | STMicroelectronics |
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I Packaging: Tube Package / Case: 26-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STGP8M120DF3 | STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 1200 V, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/126ns Switching Energy: 390µJ (on), 370µJ (Off) Test Condition: 600V, 8A, 33Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 32 A |
Produkt ist nicht verfügbar |
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STH80N10LF7-2AG | STMicroelectronics |
Description: MOSFET N-CH 100V 80A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Supplier Device Package: H2Pak-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STIB1560DM2-L | STMicroelectronics |
Description: PTD HIGH VOLTAGE Packaging: Tube Package / Case: 26-PowerDIP Module (1.146", 29.10mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 15 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STL17N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 10A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL18N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 9A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL22N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL22N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 10A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL24N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 15A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 209mOhm @ 8.5A, 10V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL26N65DM2 | STMicroelectronics |
Description: MOSFET N-CH 650V 20A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 206mOhm @ 10A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL33N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 21A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL33N60M6 | STMicroelectronics |
Description: MOSFET 600V 21A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V |
Produkt ist nicht verfügbar |
M24SR02-YSG12I/2 |
Hersteller: STMicroelectronics
Description: MEMORY
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Standards: ISO 14443, NFC
Supplier Device Package: Wafer
Description: MEMORY
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Standards: ISO 14443, NFC
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
M24SR04-GSG12I/2 |
Hersteller: STMicroelectronics
Description: 4-KBIT DYNAMIC NFC/RFID TAG NFC
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 5.5V
Standards: ISO 14443, NFC
Supplier Device Package: Wafer
Description: 4-KBIT DYNAMIC NFC/RFID TAG NFC
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 5.5V
Standards: ISO 14443, NFC
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
M24SR64-YSG12I/2 |
Hersteller: STMicroelectronics
Description: MEMORY
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Standards: ISO 14443, NFC
Supplier Device Package: Wafer
Description: MEMORY
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Standards: ISO 14443, NFC
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
SCT30N120D2 |
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 40A HIP247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Description: SICFET N-CH 1200V 40A HIP247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Produkt ist nicht verfügbar
SPC564L54L3CCFQR |
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Grade: Automotive
Number of I/O: 57
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Grade: Automotive
Number of I/O: 57
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
SPC564L54L3CCFQY |
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Grade: Automotive
Number of I/O: 57
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Grade: Automotive
Number of I/O: 57
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
SPC564L60L5CCFQR |
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
SPC564L60L5CCFQY |
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ST25DV04K-JFR6U3 |
Hersteller: STMicroelectronics
Description: 4-KBIT DYNAMIC NFC/RFID TAG NFC
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, NFC
Supplier Device Package: Wafer
Description: 4-KBIT DYNAMIC NFC/RFID TAG NFC
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, NFC
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
ST25R3911B-ASWB |
Hersteller: STMicroelectronics
Description: NFC / HF RFID READER IC
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5.5V
Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC
Supplier Device Package: Wafer
Part Status: Active
Description: NFC / HF RFID READER IC
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5.5V
Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC
Supplier Device Package: Wafer
Part Status: Active
Produkt ist nicht verfügbar
ST25R3913-AQWT |
Hersteller: STMicroelectronics
Description: NFC / HF RFID READER IC
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5.5V
Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Description: NFC / HF RFID READER IC
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5.5V
Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Produkt ist nicht verfügbar
ST25R3915-AQWT |
Hersteller: STMicroelectronics
Description: NFC / HF RFID READER IC FOR AUTO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.5V
Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Description: NFC / HF RFID READER IC FOR AUTO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.5V
Standards: FeliCa, ISO 14443, ISO 15693, ISO 18092, MIFARE, NFC
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Produkt ist nicht verfügbar
STA369BWS |
Hersteller: STMicroelectronics
Description: 2.1-CHANNEL 40-W HIGH-EFFICIENCY
Packaging: Tube
Package / Case: 36-PowerBFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Fully Integrated Processor
Interface: I²C, I²S
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 21.5V
Applications: Pre-Amplifier
Supplier Device Package: PowerSSO-36 EPD
Part Status: Obsolete
Number of Channels: 2
Description: 2.1-CHANNEL 40-W HIGH-EFFICIENCY
Packaging: Tube
Package / Case: 36-PowerBFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Fully Integrated Processor
Interface: I²C, I²S
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 21.5V
Applications: Pre-Amplifier
Supplier Device Package: PowerSSO-36 EPD
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
STA5630A |
Hersteller: STMicroelectronics
Description: GPS/GALILEO RF FRONT-END
Description: GPS/GALILEO RF FRONT-END
Produkt ist nicht verfügbar
STA5630ATR |
Hersteller: STMicroelectronics
Description: GPS/GALILEO RF FRONT-END
Description: GPS/GALILEO RF FRONT-END
Produkt ist nicht verfügbar
STA709A |
Hersteller: STMicroelectronics
Description: ADD INFOTAINMENT
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 108MHz
Modulation or Protocol: AM, FM, RDS, SW-LW
Data Interface: I2C, I2S, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Current - Receiving: 340mA
Supplier Device Package: 64-VFQFPN (9x9)
Grade: Automotive
Qualification: AEC-Q100
Description: ADD INFOTAINMENT
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 108MHz
Modulation or Protocol: AM, FM, RDS, SW-LW
Data Interface: I2C, I2S, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Current - Receiving: 340mA
Supplier Device Package: 64-VFQFPN (9x9)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
STA709ATR |
Hersteller: STMicroelectronics
Description: ADD INFOTAINMENT
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 108MHz
Modulation or Protocol: AM, FM, RDS, SW-LW
Data Interface: I2C, I2S, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Current - Receiving: 340mA
Supplier Device Package: 64-VFQFPN (9x9)
Grade: Automotive
Qualification: AEC-Q100
Description: ADD INFOTAINMENT
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 108MHz
Modulation or Protocol: AM, FM, RDS, SW-LW
Data Interface: I2C, I2S, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Current - Receiving: 340mA
Supplier Device Package: 64-VFQFPN (9x9)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
STAC0912-250 |
Hersteller: STMicroelectronics
Description: 250W 36V 960-1215 MHZ LDMOS TRAN
Description: 250W 36V 960-1215 MHZ LDMOS TRAN
Produkt ist nicht verfügbar
STAC1011-350F |
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS STAC265B
Packaging: Tube
Package / Case: STAC265B
Current Rating (Amps): 2µA
Mounting Type: Chassis Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 370W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: STAC265B
Voltage - Rated: 80 V
Description: RF MOSFET LDMOS STAC265B
Packaging: Tube
Package / Case: STAC265B
Current Rating (Amps): 2µA
Mounting Type: Chassis Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 370W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: STAC265B
Voltage - Rated: 80 V
Produkt ist nicht verfügbar
STAC1214-250 |
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS STAC265B
Packaging: Tube
Package / Case: STAC265B
Current Rating (Amps): 2µA
Mounting Type: Chassis Mount
Frequency: 1.2GHz ~ 1.4GHz
Power - Output: 260W
Gain: 14dB
Technology: LDMOS
Supplier Device Package: STAC265B
Voltage - Rated: 80 V
Description: RF MOSFET LDMOS STAC265B
Packaging: Tube
Package / Case: STAC265B
Current Rating (Amps): 2µA
Mounting Type: Chassis Mount
Frequency: 1.2GHz ~ 1.4GHz
Power - Output: 260W
Gain: 14dB
Technology: LDMOS
Supplier Device Package: STAC265B
Voltage - Rated: 80 V
Produkt ist nicht verfügbar
STB22N60DM6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
STB33N60DM6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
STD6N60DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: D-PAK (TO-252)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: D-PAK (TO-252)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
Produkt ist nicht verfügbar
STD7N60DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
Description: MOSFET N-CH 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
Produkt ist nicht verfügbar
STF22N60DM6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
STF22N60M6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
STF26N65DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
Produkt ist nicht verfügbar
STF33N60DM6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.72 EUR |
50+ | 3.76 EUR |
100+ | 3.45 EUR |
500+ | 2.94 EUR |
STF35N65DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Produkt ist nicht verfügbar
STF6N60DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
Description: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
Produkt ist nicht verfügbar
STF7N65M6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Description: MOSFET N-CH 650V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Produkt ist nicht verfügbar
STFU14N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Produkt ist nicht verfügbar
STFU25N60M2-EP |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220FP
Description: MOSFET N-CH 600V 18A TO220FP
Produkt ist nicht verfügbar
STFU26N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
STGIB10CH60S-E |
Hersteller: STMicroelectronics
Description: PTD HIGH VOLTAGE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: PTD HIGH VOLTAGE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB10CH60S-L |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB10CH60TS-E |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB15CH60S-L |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB20M60S-L |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 25 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 25 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB20M60TS-E |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 25 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 25 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB20M60TS-L |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 25 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 25 A
Voltage: 600 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 31.84 EUR |
10+ | 28.05 EUR |
STGIB30M60S-L |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 35 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 35 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB30M60TS-E |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 35 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 35 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIB8CH60S-L |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Produkt ist nicht verfügbar
STGIF10CH60TS-E |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Produkt ist nicht verfügbar
STGIF5CH60TS-E |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 8 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 8 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGIF7CH60TS-E |
Hersteller: STMicroelectronics
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: SLLIMM 2ND SERIES IPM, 3-PHASE I
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGP8M120DF3 |
Hersteller: STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 1200 V,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/126ns
Switching Energy: 390µJ (on), 370µJ (Off)
Test Condition: 600V, 8A, 33Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 32 A
Description: TRENCH GATE FIELD-STOP, 1200 V,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/126ns
Switching Energy: 390µJ (on), 370µJ (Off)
Test Condition: 600V, 8A, 33Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 32 A
Produkt ist nicht verfügbar
STH80N10LF7-2AG |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STIB1560DM2-L |
Hersteller: STMicroelectronics
Description: PTD HIGH VOLTAGE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Description: PTD HIGH VOLTAGE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
STL17N60M6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
Produkt ist nicht verfügbar
STL18N60M6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 9A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Description: MOSFET N-CH 600V 9A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Produkt ist nicht verfügbar
STL22N60DM6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
STL22N60M6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
STL24N60M6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 15A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 209mOhm @ 8.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Description: MOSFET N-CH 600V 15A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 209mOhm @ 8.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Produkt ist nicht verfügbar
STL26N65DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 206mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
Description: MOSFET N-CH 650V 20A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 206mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
Produkt ist nicht verfügbar
STL33N60DM6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 21A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
STL33N60M6 |
Hersteller: STMicroelectronics
Description: MOSFET 600V 21A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
Description: MOSFET 600V 21A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
Produkt ist nicht verfügbar