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STR2550 STR2550 STMicroelectronics en.DM00040356.pdf Description: TRANS PNP 500V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
28+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 21
LED2001PHR LED2001PHR STMicroelectronics en.DM00079085.pdf Description: IC LED DRIVER RGLTR PWM 4A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-HSOP
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
SMP3100SCMC SMP3100SCMC STMicroelectronics en.sgprot0716_web.pdf Description: THYRISTOR 275V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 40pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
SPT02-236DDB SPT02-236DDB STMicroelectronics en.DM00078786.pdf Description: TVS DIODE 36VWM 46VC 2UQFN
Packaging: Tape & Reel (TR)
Package / Case: 2-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: 2-uQFN (3.3x1.5)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 38V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 1400W (1.4kW)
Power Line Protection: No
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
STB13N60M2 STB13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.64 EUR
2000+ 1.56 EUR
5000+ 1.5 EUR
Mindestbestellmenge: 1000
STB18NM60ND STB18NM60ND STMicroelectronics en.DM00085221.pdf Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
Produkt ist nicht verfügbar
STH110N10F7-6 STH110N10F7-6 STMicroelectronics STH110N10F7-2%2C-6.pdf Description: MOSFET N-CH 100V 110A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
STH320N4F6-6 STH320N4F6-6 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Produkt ist nicht verfügbar
STL12P6F6 STL12P6F6 STMicroelectronics en.DM00080348.pdf Description: MOSFET P-CH 60V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.68 EUR
6000+ 0.64 EUR
9000+ 0.61 EUR
Mindestbestellmenge: 3000
STPS140ZY STPS140ZY STMicroelectronics en.DM00068605.pdf Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 8999 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
STR1550 STR1550 STMicroelectronics en.DM00040355.pdf Description: TRANS NPN 500V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
STR2550 STR2550 STMicroelectronics en.DM00040356.pdf Description: TRANS PNP 500V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
STF100N10F7 STF100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 45A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 2917 Stücke:
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5+4.01 EUR
50+ 3.23 EUR
100+ 2.66 EUR
500+ 2.25 EUR
1000+ 1.91 EUR
2000+ 1.81 EUR
Mindestbestellmenge: 5
STF10P6F6 STF10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P-CH 60V 10A TO220FP
Produkt ist nicht verfügbar
STF13N60M2 STF13N60M2 STMicroelectronics en.DM00070271.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
50+ 1.89 EUR
100+ 1.7 EUR
500+ 1.36 EUR
1000+ 1.25 EUR
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STGWT60V60DF STGWT60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT 600V 80A 375W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Produkt ist nicht verfügbar
STI10NM60N STI10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
STP13N60M2 STP13N60M2 STMicroelectronics en.DM00070267.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
50+ 1.83 EUR
100+ 1.63 EUR
500+ 1.42 EUR
Mindestbestellmenge: 5
STP9N60M2 STP9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.01 EUR
Mindestbestellmenge: 6
STAC3933 STAC3933 STMicroelectronics en.DM00046798.pdf Description: IC TRANS RF HV/VHF/UHF STAC177B
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
L6751TR L6751TR STMicroelectronics L6751_ds.pdf Description: IC REG CTRLR DDR 2OUT 72WPLGA
Produkt ist nicht verfügbar
LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
10+ 2.24 EUR
25+ 2.13 EUR
100+ 1.75 EUR
250+ 1.64 EUR
500+ 1.45 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 7
LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 31615 Stücke:
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4+4.45 EUR
10+ 4 EUR
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100+ 3.28 EUR
250+ 3.11 EUR
500+ 2.79 EUR
1000+ 2.35 EUR
Mindestbestellmenge: 4
LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.05 EUR
10+ 4.54 EUR
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100+ 3.72 EUR
250+ 3.53 EUR
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PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 207785 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+ 3.35 EUR
25+ 3.16 EUR
100+ 2.69 EUR
250+ 2.53 EUR
500+ 2.21 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 5
PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 10188 Stücke:
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6+3.38 EUR
10+ 3.04 EUR
25+ 2.86 EUR
100+ 2.44 EUR
250+ 2.29 EUR
500+ 2.01 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 6
ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 4207 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
10+ 3.07 EUR
25+ 2.9 EUR
100+ 2.47 EUR
250+ 2.32 EUR
500+ 2.03 EUR
1000+ 1.68 EUR
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STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.47 EUR
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500+ 3.35 EUR
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STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.33 EUR
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100+ 7.02 EUR
Mindestbestellmenge: 2
STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 3332 Stücke:
Lieferzeit 10-14 Tag (e)
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500+ 1.52 EUR
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9427 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3690 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+ 1.8 EUR
100+ 1.21 EUR
500+ 0.95 EUR
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Mindestbestellmenge: 7
STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produkt ist nicht verfügbar
STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2962 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.36 EUR
10+ 7.03 EUR
100+ 5.69 EUR
500+ 5.05 EUR
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STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.96 EUR
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500+ 4.04 EUR
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STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.92 EUR
10+ 3.25 EUR
100+ 2.59 EUR
500+ 2.19 EUR
1000+ 1.86 EUR
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STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.95 EUR
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STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 14669 Stücke:
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8+2.36 EUR
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500+ 1.28 EUR
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Mindestbestellmenge: 8
STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
auf Bestellung 7403 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.52 EUR
10+ 3.17 EUR
25+ 2.99 EUR
100+ 2.55 EUR
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500+ 2.1 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 5
STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 77851 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
18+ 1.01 EUR
100+ 0.79 EUR
500+ 0.67 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 15
L6751TR L6751TR STMicroelectronics L6751_ds.pdf Description: IC REG CTRLR DDR 2OUT 72WPLGA
Produkt ist nicht verfügbar
L6758ATR L6758ATR STMicroelectronics L6758A.pdf Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Produkt ist nicht verfügbar
LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
4500+2.23 EUR
Mindestbestellmenge: 4500
LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
Produkt ist nicht verfügbar
PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 204000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.71 EUR
8000+ 1.64 EUR
Mindestbestellmenge: 4000
PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.55 EUR
5000+ 1.49 EUR
Mindestbestellmenge: 2500
ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Produkt ist nicht verfügbar
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.21 EUR
5000+ 3.08 EUR
Mindestbestellmenge: 2500
STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.78 EUR
Mindestbestellmenge: 2500
STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produkt ist nicht verfügbar
STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.33 EUR
2000+ 4.08 EUR
Mindestbestellmenge: 1000
STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.92 EUR
Mindestbestellmenge: 1000
STR2550 en.DM00040356.pdf
STR2550
Hersteller: STMicroelectronics
Description: TRANS PNP 500V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
28+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 21
LED2001PHR en.DM00079085.pdf
LED2001PHR
Hersteller: STMicroelectronics
Description: IC LED DRIVER RGLTR PWM 4A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-HSOP
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
SMP3100SCMC en.sgprot0716_web.pdf
SMP3100SCMC
Hersteller: STMicroelectronics
Description: THYRISTOR 275V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 40pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
SPT02-236DDB en.DM00078786.pdf
SPT02-236DDB
Hersteller: STMicroelectronics
Description: TVS DIODE 36VWM 46VC 2UQFN
Packaging: Tape & Reel (TR)
Package / Case: 2-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: 2-uQFN (3.3x1.5)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 38V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 1400W (1.4kW)
Power Line Protection: No
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
STB13N60M2 en.DM00082928.pdf
STB13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.64 EUR
2000+ 1.56 EUR
5000+ 1.5 EUR
Mindestbestellmenge: 1000
STB18NM60ND en.DM00085221.pdf
STB18NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
Produkt ist nicht verfügbar
STH110N10F7-6 STH110N10F7-2%2C-6.pdf
STH110N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
STH320N4F6-6 en.DM00076403.pdf
STH320N4F6-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Produkt ist nicht verfügbar
STL12P6F6 en.DM00080348.pdf
STL12P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.68 EUR
6000+ 0.64 EUR
9000+ 0.61 EUR
Mindestbestellmenge: 3000
STPS140ZY en.DM00068605.pdf
STPS140ZY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 8999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
STR1550 en.DM00040355.pdf
STR1550
Hersteller: STMicroelectronics
Description: TRANS NPN 500V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
STR2550 en.DM00040356.pdf
STR2550
Hersteller: STMicroelectronics
Description: TRANS PNP 500V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
STF100N10F7 en.DM00066568.pdf
STF100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 45A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 2917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.01 EUR
50+ 3.23 EUR
100+ 2.66 EUR
500+ 2.25 EUR
1000+ 1.91 EUR
2000+ 1.81 EUR
Mindestbestellmenge: 5
STF10P6F6 en.DM00051198.pdf
STF10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220FP
Produkt ist nicht verfügbar
STF13N60M2 en.DM00070271.pdf
STF13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.85 EUR
50+ 1.89 EUR
100+ 1.7 EUR
500+ 1.36 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 5
STGWT60V60DF en.DM00074810.pdf
STGWT60V60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 80A 375W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Produkt ist nicht verfügbar
STI10NM60N std10nm60n.pdf
STI10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
STP13N60M2 en.DM00070267.pdf
STP13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.24 EUR
50+ 1.83 EUR
100+ 1.63 EUR
500+ 1.42 EUR
Mindestbestellmenge: 5
STP9N60M2 en.DM00080324.pdf
STP9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.01 EUR
Mindestbestellmenge: 6
STAC3933 en.DM00046798.pdf
STAC3933
Hersteller: STMicroelectronics
Description: IC TRANS RF HV/VHF/UHF STAC177B
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
L6751TR L6751_ds.pdf
L6751TR
Hersteller: STMicroelectronics
Description: IC REG CTRLR DDR 2OUT 72WPLGA
Produkt ist nicht verfügbar
LD1086PUR en.CD00001884.pdf
LD1086PUR
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.24 EUR
25+ 2.13 EUR
100+ 1.75 EUR
250+ 1.64 EUR
500+ 1.45 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 7
LED2001PUR en.DM00079085.pdf
LED2001PUR
Hersteller: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 31615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 4 EUR
25+ 3.78 EUR
100+ 3.28 EUR
250+ 3.11 EUR
500+ 2.79 EUR
1000+ 2.35 EUR
Mindestbestellmenge: 4
LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Hersteller: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.05 EUR
10+ 4.54 EUR
25+ 4.29 EUR
100+ 3.72 EUR
250+ 3.53 EUR
Mindestbestellmenge: 4
PM8834MTR en.CD00212712.pdf
PM8834MTR
Hersteller: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 207785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.73 EUR
10+ 3.35 EUR
25+ 3.16 EUR
100+ 2.69 EUR
250+ 2.53 EUR
500+ 2.21 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 5
PM8903ATR en.DM00074624.pdf
PM8903ATR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 10188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.38 EUR
10+ 3.04 EUR
25+ 2.86 EUR
100+ 2.44 EUR
250+ 2.29 EUR
500+ 2.01 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 6
ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 4207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.41 EUR
10+ 3.07 EUR
25+ 2.9 EUR
100+ 2.47 EUR
250+ 2.32 EUR
500+ 2.03 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 6
STB13N80K5 en.DM00079143.pdf
STB13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.47 EUR
10+ 5.64 EUR
100+ 4.03 EUR
500+ 3.35 EUR
Mindestbestellmenge: 3
STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.33 EUR
10+ 8.67 EUR
100+ 7.02 EUR
Mindestbestellmenge: 2
STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 3332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.42 EUR
10+ 2.62 EUR
100+ 1.85 EUR
500+ 1.52 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 4
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.6 EUR
10+ 5.55 EUR
100+ 4.49 EUR
500+ 3.99 EUR
1000+ 3.41 EUR
Mindestbestellmenge: 3
STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.83 EUR
10+ 1.8 EUR
100+ 1.21 EUR
500+ 0.95 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 7
STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produkt ist nicht verfügbar
STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.36 EUR
10+ 7.03 EUR
100+ 5.69 EUR
500+ 5.05 EUR
Mindestbestellmenge: 3
STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH3N150-2 en.CD00149569.pdf
STH3N150-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.96 EUR
10+ 6.69 EUR
100+ 4.83 EUR
500+ 4.04 EUR
Mindestbestellmenge: 2
STL110N10F7 en.DM00071579.pdf
STL110N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.92 EUR
10+ 3.25 EUR
100+ 2.59 EUR
500+ 2.19 EUR
1000+ 1.86 EUR
Mindestbestellmenge: 5
STL38N65M5 en.DM00056210.pdf
STL38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.95 EUR
10+ 7.4 EUR
100+ 5.38 EUR
500+ 4.52 EUR
1000+ 4.5 EUR
Mindestbestellmenge: 2
STL60N10F7 en.DM00081178.pdf
STL60N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 14669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.36 EUR
10+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 8
STNS01PUR en.DM00085223.pdf
STNS01PUR
Hersteller: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
auf Bestellung 7403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.52 EUR
10+ 3.17 EUR
25+ 2.99 EUR
100+ 2.55 EUR
250+ 2.39 EUR
500+ 2.1 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 5
STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 77851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
18+ 1.01 EUR
100+ 0.79 EUR
500+ 0.67 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 15
L6751TR L6751_ds.pdf
L6751TR
Hersteller: STMicroelectronics
Description: IC REG CTRLR DDR 2OUT 72WPLGA
Produkt ist nicht verfügbar
L6758ATR L6758A.pdf
L6758ATR
Hersteller: STMicroelectronics
Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Produkt ist nicht verfügbar
LD1086PUR en.CD00001884.pdf
LD1086PUR
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
LED2001PUR en.DM00079085.pdf
LED2001PUR
Hersteller: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4500+2.23 EUR
Mindestbestellmenge: 4500
LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Hersteller: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
Produkt ist nicht verfügbar
PM8834MTR en.CD00212712.pdf
PM8834MTR
Hersteller: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 204000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+1.71 EUR
8000+ 1.64 EUR
Mindestbestellmenge: 4000
PM8903ATR en.DM00074624.pdf
PM8903ATR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.55 EUR
5000+ 1.49 EUR
Mindestbestellmenge: 2500
ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
STB13N80K5 en.DM00079143.pdf
STB13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Produkt ist nicht verfügbar
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+3.21 EUR
5000+ 3.08 EUR
Mindestbestellmenge: 2500
STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.78 EUR
Mindestbestellmenge: 2500
STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produkt ist nicht verfügbar
STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+4.33 EUR
2000+ 4.08 EUR
Mindestbestellmenge: 1000
STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH3N150-2 en.CD00149569.pdf
STH3N150-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.92 EUR
Mindestbestellmenge: 1000
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