Hersteller: Aillen
Description: RES 43.2K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 43.2 kOhms

Hersteller: International Rectifier
N-MOSFET HEXFET 140A 100V 330W 0.007Ω IRFB4310 TIRFB4310
Anzahl je Verpackung: 2 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V

Hersteller: UMW
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V

Hersteller: International Rectifier
N-MOSFET 60A 250V 390W 0.033Ω IRFB4332 TIRFB4332
Anzahl je Verpackung: 10 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V

Hersteller: International Rectifier Corporation
Trans MOSFET N-CH 100V 130A TO-220AB

Hersteller: IR
10+ T0-220

Hersteller: MURATA

N/A

Hersteller: MASTER KIT
Modulare Elemente > Blöcke und Module
BESCHREIBUNG: Empfänger für Pult FB 433 MHz MP910 (Tasten, zwei Relais) Dieser Empfänger Fernbedienung Geeignet für gemeinsame Operation mit unbegrenzte Zahl der Anhänger mР910.

Hersteller: FAIR-RITE
Description: FAIR-RITE - 2643001501 - Ferritkern, zylindrisch, 35 Ohm, 3.25mm lang, 25MHz bis 300MHz, 1.6mm Innen-Ø, 3.5mm Außen-Ø
tariffCode: 85049011
Frequenz, min.: 25MHz
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Außendurchmesser: 3.5mm
euEccn: NLR
Frequenz, max.: 300MHz
Produktlänge: 3.25mm
hazardous: false
rohsPhthalatesCompliant: YES
Innendurchmesser: 1.6mm
Impedanz: 35ohm
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (27-Jun-2024)

Hersteller: FAIR-RITE
Description: FAIR-RITE - 2661021801 - Ferritkern, zylindrisch, 185 Ohm, 25MHz bis 1GHz, 1.45mm Innen-Ø, 5.1mm Außen-Ø, 11.1mm L
tariffCode: 85051190
Frequenz, min.: 250MHz
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Außendurchmesser: 5.1mm
euEccn: NLR
Frequenz, max.: 1GHz
Produktlänge: 11.1mm
hazardous: false
rohsPhthalatesCompliant: YES
Innendurchmesser: 1.45mm
Impedanz: 185ohm
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (27-Jun-2024)

Hersteller: KEMET
Description: CAP ALUM 430UF 20% 400V SCREW CH
Packaging: Bulk
Tolerance: ±20%
Package / Case: Radial, Can - Screw Terminals
Size / Dimension: 1.417" Dia (36.00mm)
Polarization: Polar
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 105°C
Applications: General Purpose
Lead Spacing: 0.504" (12.80mm)
ESR (Equivalent Series Resistance): 308mOhm @ 100Hz
Lifetime @ Temp.: 6000 Hrs @ 105°C
Height - Seated (Max): 2.126" (54.00mm)
Part Status: Active
Capacitance: 430 µF
Voltage - Rated: 400 V
Impedance: 173 mOhms
Ripple Current @ Low Frequency: 2.6 A @ 100 Hz
Ripple Current @ High Frequency: 6.4 A @ 10 kHz

Hersteller: Bourns
Transformatoren, Netzfilter, Drosseln > Transformatoren verschiedene andere

Optoelektronik > LED-Controller, Dimmer, Regler
Beschreibung: Adapter Stecker-Steckdose an der Fernbedienung 433 MHz. Hier können Sie die Belastung verwalten bis 1kW. Frenbedienung vorgesehen für 4 vers. Adapter.

Transistoren > MOSFET N-CH

Transistoren > MOSFET N-CH

Transistoren > MOSFET N-CH

Transistoren > MOSFET N-CH

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 150
Idd,A: 85
Rds(on), Ohm: 12 mOhm
Ciss, pF/Qg, nC: 4460/71
JHGF: THT

Transistoren > MOSFET N-CH

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Uds,V: 250 V
Idd,A: 42 A
Rds(on), Ohm: 29 mOhm
Ciss, pF/Qg, nC: 5860/99
JHGF: THT

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 432 OHM 1
Power (Watts): 25W
Tolerance: ±1%
Lead Style: Solder Lugs
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 1.063" L x 1.063" W (27.00mm x 27.00mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.587" (14.90mm)
Part Status: Active
Resistance: 432 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 43.2 OHM
Power (Watts): 25W
Tolerance: ±1%
Lead Style: Solder Lugs
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 1.063" L x 1.063" W (27.00mm x 27.00mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.587" (14.90mm)
Part Status: Active
Resistance: 43.2 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 432 OHM 1
Power (Watts): 5W
Tolerance: ±1%
Lead Style: Solder Lugs
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.591" L x 0.650" W (15.00mm x 16.50mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.358" (9.10mm)
Part Status: Active
Resistance: 432 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 43.2 OHM
Power (Watts): 5W
Tolerance: ±1%
Lead Style: Solder Lugs
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.591" L x 0.650" W (15.00mm x 16.50mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.358" (9.10mm)
Part Status: Active
Resistance: 43.2 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 432 OHM 1
Power (Watts): 50W
Tolerance: ±1%
Lead Style: Solder Lugs
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 1.969" L x 1.142" W (50.00mm x 29.00mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.650" (16.50mm)
Part Status: Active
Resistance: 432 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 43.2 OHM
Power (Watts): 50W
Tolerance: ±1%
Lead Style: Solder Lugs
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 1.969" L x 1.142" W (50.00mm x 29.00mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.650" (16.50mm)
Part Status: Active
Resistance: 43.2 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 432 OHM 1
Power (Watts): 80W
Tolerance: ±1%
Lead Style: M5 Threaded
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 2.598" L x 1.850" W (66.00mm x 47.00mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 1.024" (26.00mm)
Part Status: Active
Resistance: 432 Ohms

Hersteller: YAGEO
Description: RESISTOR CHASSIS MOUNT 43.2 OHM
Power (Watts): 80W
Tolerance: ±1%
Lead Style: M5 Threaded
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 2.598" L x 1.850" W (66.00mm x 47.00mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 1.024" (26.00mm)
Part Status: Active
Resistance: 43.2 Ohms