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BH28SA3WGUT-E2 BH28SA3WGUT-E2 Rohm Semiconductor Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
R6035KNZC17 R6035KNZC17 Rohm Semiconductor datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
Mindestbestellmenge: 2
R6030KNZC17 R6030KNZC17 Rohm Semiconductor datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.63 EUR
10+ 9.97 EUR
100+ 8.31 EUR
Mindestbestellmenge: 2
R6030JNZC17 R6030JNZC17 Rohm Semiconductor datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.69 EUR
10+ 10.01 EUR
100+ 8.34 EUR
Mindestbestellmenge: 2
R6077VNZC17 R6077VNZC17 Rohm Semiconductor datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 420 Stücke:
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1+18.96 EUR
30+ 15.34 EUR
120+ 14.44 EUR
R6515KNZC17 R6515KNZC17 Rohm Semiconductor datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.76 EUR
10+ 7.86 EUR
100+ 6.44 EUR
Mindestbestellmenge: 3
R6530KNZC17 R6530KNZC17 Rohm Semiconductor datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
Mindestbestellmenge: 2
R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
Mindestbestellmenge: 2
R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
Mindestbestellmenge: 2
R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.21 EUR
10+ 10.08 EUR
100+ 8.26 EUR
Mindestbestellmenge: 2
SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4713 Stücke:
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1+34.97 EUR
30+ 28.99 EUR
120+ 27.18 EUR
510+ 23.19 EUR
SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.45 EUR
30+ 29.39 EUR
120+ 27.55 EUR
SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.01 EUR
10+ 32.01 EUR
SCT4026DEC11 SCT4026DEC11 Rohm Semiconductor datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.43 EUR
30+ 28.53 EUR
120+ 26.75 EUR
510+ 22.83 EUR
SCT4062KEHRC11 SCT4062KEHRC11 Rohm Semiconductor datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 214 Stücke:
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1+26.86 EUR
10+ 19.02 EUR
100+ 14.59 EUR
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1534 Stücke:
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20+0.88 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
Mindestbestellmenge: 20
2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 8000 Stücke:
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1000+0.51 EUR
2000+ 0.46 EUR
5000+ 0.45 EUR
Mindestbestellmenge: 1000
2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 9123 Stücke:
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16+1.16 EUR
18+ 1.02 EUR
100+ 0.78 EUR
500+ 0.62 EUR
Mindestbestellmenge: 16
SDR10EZPJ182 SDR10EZPJ182 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.8 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.048 EUR
Mindestbestellmenge: 5000
SDR10EZPJ182 SDR10EZPJ182 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.8 kOhms
auf Bestellung 9890 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
51+ 0.35 EUR
130+ 0.14 EUR
1000+ 0.057 EUR
2500+ 0.052 EUR
Mindestbestellmenge: 44
ESR01MZPJ204 ESR01MZPJ204 Rohm Semiconductor esr-e.pdf Description: RES 200K OHM 5% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 200 kOhms
Produkt ist nicht verfügbar
ESR01MZPJ204 ESR01MZPJ204 Rohm Semiconductor esr-e.pdf Description: RES 200K OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 200 kOhms
auf Bestellung 9950 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
87+ 0.2 EUR
128+ 0.14 EUR
148+ 0.12 EUR
500+ 0.088 EUR
1000+ 0.078 EUR
5000+ 0.061 EUR
Mindestbestellmenge: 46
DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 28
DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
Produkt ist nicht verfügbar
ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 9755 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
34+ 0.53 EUR
64+ 0.28 EUR
100+ 0.21 EUR
500+ 0.12 EUR
1000+ 0.086 EUR
5000+ 0.072 EUR
Mindestbestellmenge: 29
LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
Produkt ist nicht verfügbar
LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
12+ 1.48 EUR
50+ 1.24 EUR
100+ 1.07 EUR
500+ 0.76 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 11
RSA12LAGTR RSA12LAGTR Rohm Semiconductor Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Tape & Reel (TR)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Cut Tape (CT)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
auf Bestellung 4105 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
21+ 0.85 EUR
100+ 0.49 EUR
1000+ 0.28 EUR
2500+ 0.27 EUR
Mindestbestellmenge: 16
PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
RGW00TS65HRC11 RGW00TS65HRC11 Rohm Semiconductor datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.75 EUR
10+ 9.22 EUR
450+ 6.78 EUR
Mindestbestellmenge: 2
RGWX5TS65HRC11 RGWX5TS65HRC11 Rohm Semiconductor datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.25 EUR
10+ 11.36 EUR
450+ 8.35 EUR
Mindestbestellmenge: 2
RGW80TS65HRC11 RGW80TS65HRC11 Rohm Semiconductor datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.82 EUR
10+ 9.08 EUR
Mindestbestellmenge: 2
UFZVTE-175.1B UFZVTE-175.1B Rohm Semiconductor datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 500MW 5.1V, SOD-323FL, SMALL AND
Packaging: Cut Tape (CT)
Tolerance: ±2.55%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: UMD2
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
35+ 0.51 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
BR24T64FVT-WE2 BR24T64FVT-WE2 Rohm Semiconductor datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.85 EUR
25+ 0.79 EUR
100+ 0.7 EUR
250+ 0.69 EUR
500+ 0.68 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 21
ML9213GPZ03A-M Rohm Semiconductor Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
SFR10EZPF1503 SFR10EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
Produkt ist nicht verfügbar
SFR10EZPF1503 SFR10EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
117+ 0.15 EUR
174+ 0.1 EUR
203+ 0.087 EUR
500+ 0.062 EUR
1000+ 0.055 EUR
Mindestbestellmenge: 56
SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.03 EUR
Mindestbestellmenge: 5000
SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
162+ 0.11 EUR
243+ 0.073 EUR
285+ 0.062 EUR
500+ 0.044 EUR
1000+ 0.039 EUR
Mindestbestellmenge: 84
SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
Produkt ist nicht verfügbar
SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
122+ 0.14 EUR
183+ 0.096 EUR
214+ 0.082 EUR
500+ 0.059 EUR
1000+ 0.052 EUR
Mindestbestellmenge: 63
LTR100JZPJ511 LTR100JZPJ511 Rohm Semiconductor ltr-e.pdf Description: RES SMD 510 OHM 5% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 510 Ohms
Produkt ist nicht verfügbar
LTR100JZPJ511 LTR100JZPJ511 Rohm Semiconductor ltr-e.pdf Description: RES SMD 510 OHM 5% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
24+ 0.76 EUR
50+ 0.55 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 14
SFR10EZPJ511 SFR10EZPJ511 Rohm Semiconductor sfr-e.pdf Description: RES 510 OHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
Produkt ist nicht verfügbar
SFR10EZPJ511 SFR10EZPJ511 Rohm Semiconductor sfr-e.pdf Description: RES 510 OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
148+ 0.12 EUR
219+ 0.081 EUR
257+ 0.069 EUR
500+ 0.049 EUR
1000+ 0.043 EUR
Mindestbestellmenge: 77
SFR18EZPJ511 SFR18EZPJ511 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.043 EUR
Mindestbestellmenge: 5000
SFR18EZPJ511 SFR18EZPJ511 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 9673 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
114+ 0.15 EUR
169+ 0.1 EUR
198+ 0.089 EUR
500+ 0.064 EUR
1000+ 0.056 EUR
Mindestbestellmenge: 56
LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
108+ 0.16 EUR
161+ 0.11 EUR
189+ 0.093 EUR
500+ 0.067 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 56
LTR100JZPJ510 LTR100JZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
LTR100JZPJ510 LTR100JZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
24+ 0.74 EUR
50+ 0.53 EUR
100+ 0.47 EUR
500+ 0.36 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 14
SFR10EZPJ510 SFR10EZPJ510 Rohm Semiconductor sfr-e.pdf Description: RES 51 OHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
SFR10EZPJ510 SFR10EZPJ510 Rohm Semiconductor sfr-e.pdf Description: RES 51 OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 4673 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
152+ 0.12 EUR
225+ 0.078 EUR
264+ 0.067 EUR
500+ 0.048 EUR
1000+ 0.042 EUR
Mindestbestellmenge: 77
BH28SA3WGUT-E2
BH28SA3WGUT-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
R6035KNZC17 datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6035KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
Mindestbestellmenge: 2
R6030KNZC17 datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.63 EUR
10+ 9.97 EUR
100+ 8.31 EUR
Mindestbestellmenge: 2
R6030JNZC17 datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030JNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.69 EUR
10+ 10.01 EUR
100+ 8.34 EUR
Mindestbestellmenge: 2
R6077VNZC17 datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6077VNZC17
Hersteller: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.96 EUR
30+ 15.34 EUR
120+ 14.44 EUR
R6515KNZC17 datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.76 EUR
10+ 7.86 EUR
100+ 6.44 EUR
Mindestbestellmenge: 3
R6530KNZC17 datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
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R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.13 EUR
10+ 10.39 EUR
100+ 8.66 EUR
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R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.03 EUR
10+ 8.6 EUR
100+ 7.17 EUR
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R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.21 EUR
10+ 10.08 EUR
100+ 8.26 EUR
Mindestbestellmenge: 2
SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Hersteller: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4713 Stücke:
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Anzahl Preis ohne MwSt
1+34.97 EUR
30+ 28.99 EUR
120+ 27.18 EUR
510+ 23.19 EUR
SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Hersteller: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+35.45 EUR
30+ 29.39 EUR
120+ 27.55 EUR
SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+36.01 EUR
10+ 32.01 EUR
SCT4026DEC11 datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEC11
Hersteller: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+34.43 EUR
30+ 28.53 EUR
120+ 26.75 EUR
510+ 22.83 EUR
SCT4062KEHRC11 datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4062KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+26.86 EUR
10+ 19.02 EUR
100+ 14.59 EUR
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
Mindestbestellmenge: 20
2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.51 EUR
2000+ 0.46 EUR
5000+ 0.45 EUR
Mindestbestellmenge: 1000
2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 9123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.02 EUR
100+ 0.78 EUR
500+ 0.62 EUR
Mindestbestellmenge: 16
SDR10EZPJ182 sdr-e.pdf
SDR10EZPJ182
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.8 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.048 EUR
Mindestbestellmenge: 5000
SDR10EZPJ182 sdr-e.pdf
SDR10EZPJ182
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.8 kOhms
auf Bestellung 9890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
51+ 0.35 EUR
130+ 0.14 EUR
1000+ 0.057 EUR
2500+ 0.052 EUR
Mindestbestellmenge: 44
ESR01MZPJ204 esr-e.pdf
ESR01MZPJ204
Hersteller: Rohm Semiconductor
Description: RES 200K OHM 5% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 200 kOhms
Produkt ist nicht verfügbar
ESR01MZPJ204 esr-e.pdf
ESR01MZPJ204
Hersteller: Rohm Semiconductor
Description: RES 200K OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 200 kOhms
auf Bestellung 9950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
87+ 0.2 EUR
128+ 0.14 EUR
148+ 0.12 EUR
500+ 0.088 EUR
1000+ 0.078 EUR
5000+ 0.061 EUR
Mindestbestellmenge: 46
DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 28
DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Hersteller: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
Produkt ist nicht verfügbar
ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Hersteller: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 9755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
34+ 0.53 EUR
64+ 0.28 EUR
100+ 0.21 EUR
500+ 0.12 EUR
1000+ 0.086 EUR
5000+ 0.072 EUR
Mindestbestellmenge: 29
LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Hersteller: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
Produkt ist nicht verfügbar
LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Hersteller: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
12+ 1.48 EUR
50+ 1.24 EUR
100+ 1.07 EUR
500+ 0.76 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 11
RSA12LAGTR
RSA12LAGTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Tape & Reel (TR)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Cut Tape (CT)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
auf Bestellung 4105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
21+ 0.85 EUR
100+ 0.49 EUR
1000+ 0.28 EUR
2500+ 0.27 EUR
Mindestbestellmenge: 16
PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
RGW00TS65HRC11 datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.75 EUR
10+ 9.22 EUR
450+ 6.78 EUR
Mindestbestellmenge: 2
RGWX5TS65HRC11 datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.25 EUR
10+ 11.36 EUR
450+ 8.35 EUR
Mindestbestellmenge: 2
RGW80TS65HRC11 datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.82 EUR
10+ 9.08 EUR
Mindestbestellmenge: 2
UFZVTE-175.1B datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UFZVTE-175.1B
Hersteller: Rohm Semiconductor
Description: 500MW 5.1V, SOD-323FL, SMALL AND
Packaging: Cut Tape (CT)
Tolerance: ±2.55%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: UMD2
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
35+ 0.51 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
BR24T64FVT-WE2 datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T64FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.85 EUR
25+ 0.79 EUR
100+ 0.7 EUR
250+ 0.69 EUR
500+ 0.68 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 21
ML9213GPZ03A-M
Hersteller: Rohm Semiconductor
Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
SFR10EZPF1503 sfr-e.pdf
SFR10EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
Produkt ist nicht verfügbar
SFR10EZPF1503 sfr-e.pdf
SFR10EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
117+ 0.15 EUR
174+ 0.1 EUR
203+ 0.087 EUR
500+ 0.062 EUR
1000+ 0.055 EUR
Mindestbestellmenge: 56
SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.03 EUR
Mindestbestellmenge: 5000
SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
84+0.21 EUR
162+ 0.11 EUR
243+ 0.073 EUR
285+ 0.062 EUR
500+ 0.044 EUR
1000+ 0.039 EUR
Mindestbestellmenge: 84
SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
Produkt ist nicht verfügbar
SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
122+ 0.14 EUR
183+ 0.096 EUR
214+ 0.082 EUR
500+ 0.059 EUR
1000+ 0.052 EUR
Mindestbestellmenge: 63
LTR100JZPJ511 ltr-e.pdf
LTR100JZPJ511
Hersteller: Rohm Semiconductor
Description: RES SMD 510 OHM 5% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 510 Ohms
Produkt ist nicht verfügbar
LTR100JZPJ511 ltr-e.pdf
LTR100JZPJ511
Hersteller: Rohm Semiconductor
Description: RES SMD 510 OHM 5% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.34 EUR
24+ 0.76 EUR
50+ 0.55 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 14
SFR10EZPJ511 sfr-e.pdf
SFR10EZPJ511
Hersteller: Rohm Semiconductor
Description: RES 510 OHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
Produkt ist nicht verfügbar
SFR10EZPJ511 sfr-e.pdf
SFR10EZPJ511
Hersteller: Rohm Semiconductor
Description: RES 510 OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
148+ 0.12 EUR
219+ 0.081 EUR
257+ 0.069 EUR
500+ 0.049 EUR
1000+ 0.043 EUR
Mindestbestellmenge: 77
SFR18EZPJ511 sfr-e.pdf
SFR18EZPJ511
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.043 EUR
Mindestbestellmenge: 5000
SFR18EZPJ511 sfr-e.pdf
SFR18EZPJ511
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 9673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
114+ 0.15 EUR
169+ 0.1 EUR
198+ 0.089 EUR
500+ 0.064 EUR
1000+ 0.056 EUR
Mindestbestellmenge: 56
LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Hersteller: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Hersteller: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
108+ 0.16 EUR
161+ 0.11 EUR
189+ 0.093 EUR
500+ 0.067 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 56
LTR100JZPJ510 ltr-e.pdf
LTR100JZPJ510
Hersteller: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
LTR100JZPJ510 ltr-e.pdf
LTR100JZPJ510
Hersteller: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
24+ 0.74 EUR
50+ 0.53 EUR
100+ 0.47 EUR
500+ 0.36 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 14
SFR10EZPJ510 sfr-e.pdf
SFR10EZPJ510
Hersteller: Rohm Semiconductor
Description: RES 51 OHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
SFR10EZPJ510 sfr-e.pdf
SFR10EZPJ510
Hersteller: Rohm Semiconductor
Description: RES 51 OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 4673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
152+ 0.12 EUR
225+ 0.078 EUR
264+ 0.067 EUR
500+ 0.048 EUR
1000+ 0.042 EUR
Mindestbestellmenge: 77
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