Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (100326) > Seite 759 nach 1673
Foto | Bezeichnung | Hersteller | Beschreibung |
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KDZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 17.25V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 17.25 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR18B | Rohm Semiconductor |
Description: DIODE ZENER 19.15V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 19.15 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
auf Bestellung 31622 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR20B | Rohm Semiconductor |
Description: DIODE ZENER 21.2V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 21.2 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 15 V |
auf Bestellung 5733 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR22B | Rohm Semiconductor | Description: DIODE ZENER 23.85V 1W PMDU |
auf Bestellung 2058 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR27B | Rohm Semiconductor | Description: DIODE ZENER 27V 1W PMDU |
auf Bestellung 3006 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR3.6B | Rohm Semiconductor | Description: DIODE ZENER 3.6V 1W PMDU |
auf Bestellung 9457 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR3.9B | Rohm Semiconductor | Description: DIODE ZENER 3.9V 1W PMDU |
Produkt ist nicht verfügbar |
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KDZVTR30B | Rohm Semiconductor |
Description: DIODE ZENER 32V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 32 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 23 V |
auf Bestellung 5790 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR33B | Rohm Semiconductor | Description: DIODE ZENER 33V 1W PMDU |
Produkt ist nicht verfügbar |
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KDZVTR4.3B | Rohm Semiconductor |
Description: DIODE ZENER 4.55V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 4.55 V Supplier Device Package: PMDU Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR4.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.95V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 4.95 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
auf Bestellung 11856 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.4V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 5.4 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
auf Bestellung 8036 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR5.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.95V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 5.95 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V |
auf Bestellung 1603 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR6.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.6V 1W PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 6.6 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 3 V |
auf Bestellung 17096 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR6.8B | Rohm Semiconductor | Description: DIODE ZENER 6.8V 1W PMDU |
auf Bestellung 2650 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR7.5B | Rohm Semiconductor | Description: DIODE ZENER 7.5V 1W PMDU |
auf Bestellung 8029 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR8.2B | Rohm Semiconductor | Description: DIODE ZENER 8.2V 1W PMDU |
auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR9.1B | Rohm Semiconductor | Description: DIODE ZENER 9.1V 1W PMDU |
auf Bestellung 1524 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR11B | Rohm Semiconductor | Description: DIODE ZENER 11V 1W PMDU |
auf Bestellung 840 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR13B | Rohm Semiconductor | Description: DIODE ZENER 13V 1W PMDU |
auf Bestellung 6144 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR6.8B | Rohm Semiconductor | Description: DIODE ZENER 6.8V 1W PMDU |
auf Bestellung 2650 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR9.1B | Rohm Semiconductor | Description: DIODE ZENER 9.1V 1W PMDU |
auf Bestellung 1524 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR11B | Rohm Semiconductor | Description: DIODE ZENER 11V 1W PMDU |
Produkt ist nicht verfügbar |
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BD63715AEFV-E2 | Rohm Semiconductor | Description: IC MTR DRV BIPLR 19-28V 28HTSSOP |
Produkt ist nicht verfügbar |
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BD63720AEFV-E2 | Rohm Semiconductor | Description: IC MTR DRV BIPLR 19-28V 28HTSSOP |
Produkt ist nicht verfügbar |
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BD63715AEFV-E2 | Rohm Semiconductor | Description: IC MTR DRV BIPLR 19-28V 28HTSSOP |
auf Bestellung 2482 Stücke: Lieferzeit 10-14 Tag (e) |
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BD63720AEFV-E2 | Rohm Semiconductor | Description: IC MTR DRV BIPLR 19-28V 28HTSSOP |
auf Bestellung 2162 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E070BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V |
Produkt ist nicht verfügbar |
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RF4E070GNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
Produkt ist nicht verfügbar |
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RF4E080BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
Produkt ist nicht verfügbar |
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RF4E080GNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
Produkt ist nicht verfügbar |
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RF4E110BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
Produkt ist nicht verfügbar |
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RF4E110GNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E080GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A 8HSMT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
Produkt ist nicht verfügbar |
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RQ3E100GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A 8HSMT |
Produkt ist nicht verfügbar |
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RQ3E120GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 12A 8-HSMT |
Produkt ist nicht verfügbar |
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RQ3E150GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 15A 8HSMT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A 8HSMT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V |
Produkt ist nicht verfügbar |
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RS1E130GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta), 22.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V |
Produkt ist nicht verfügbar |
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RS1E150GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 15A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
Produkt ist nicht verfügbar |
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RS1E200GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 20A 8HSOP |
Produkt ist nicht verfügbar |
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RS1E240GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 24A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V Power Dissipation (Max): 3W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E320GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 32A 8HSOP |
Produkt ist nicht verfügbar |
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RF4E070BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V |
auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E070GNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E080BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
auf Bestellung 2036 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E080GNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
auf Bestellung 782 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E110BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
auf Bestellung 966 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E110GNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V |
auf Bestellung 6452 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E080GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V |
auf Bestellung 2284 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E100GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A 8HSMT |
Produkt ist nicht verfügbar |
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RQ3E120GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 12A 8-HSMT |
auf Bestellung 2621 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E150GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 15A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V |
auf Bestellung 19165 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V |
auf Bestellung 4590 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E130GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta), 22.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V |
auf Bestellung 1051 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E150GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 15A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 2255 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E200GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 20A 8HSOP |
Produkt ist nicht verfügbar |
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RS1E240GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 24A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V Power Dissipation (Max): 3W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
auf Bestellung 8661 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E280GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
auf Bestellung 874 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1E320GNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 32A 8HSOP |
Produkt ist nicht verfügbar |
KDZVTR16B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 17.25V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 17.25 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 17.25V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 17.25 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
KDZVTR18B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 19.15V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 31622 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
35+ | 0.52 EUR |
100+ | 0.35 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
KDZVTR20B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 21.2V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 21.2 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
Description: DIODE ZENER 21.2V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 21.2 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
auf Bestellung 5733 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
KDZVTR22B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 23.85V 1W PMDU
Description: DIODE ZENER 23.85V 1W PMDU
auf Bestellung 2058 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR27B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 1W PMDU
Description: DIODE ZENER 27V 1W PMDU
auf Bestellung 3006 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR3.6B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.6V 1W PMDU
Description: DIODE ZENER 3.6V 1W PMDU
auf Bestellung 9457 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR3.9B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 1W PMDU
Description: DIODE ZENER 3.9V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR30B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 32V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 32 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Description: DIODE ZENER 32V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 32 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
auf Bestellung 5790 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
37+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
KDZVTR33B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 1W PMDU
Description: DIODE ZENER 33V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR4.3B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.55V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.55 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.55V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.55 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
KDZVTR4.7B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 11856 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
KDZVTR5.1B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.4V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.4 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 5.4V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.4 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 8036 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
KDZVTR5.6B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Description: DIODE ZENER 5.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
auf Bestellung 1603 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
35+ | 0.51 EUR |
100+ | 0.33 EUR |
500+ | 0.25 EUR |
1000+ | 0.22 EUR |
KDZVTR6.2B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.6 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
Description: DIODE ZENER 6.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.6 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 3 V
auf Bestellung 17096 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
KDZVTR6.8B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDU
Description: DIODE ZENER 6.8V 1W PMDU
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR7.5B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 1W PMDU
Description: DIODE ZENER 7.5V 1W PMDU
auf Bestellung 8029 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR8.2B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDU
Description: DIODE ZENER 8.2V 1W PMDU
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR9.1B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 1W PMDU
Description: DIODE ZENER 9.1V 1W PMDU
auf Bestellung 1524 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR11B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 1W PMDU
Description: DIODE ZENER 11V 1W PMDU
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR13B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 1W PMDU
Description: DIODE ZENER 13V 1W PMDU
auf Bestellung 6144 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR6.8B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDU
Description: DIODE ZENER 6.8V 1W PMDU
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR9.1B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 1W PMDU
Description: DIODE ZENER 9.1V 1W PMDU
auf Bestellung 1524 Stücke:
Lieferzeit 10-14 Tag (e)KDZVTR11B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 1W PMDU
Description: DIODE ZENER 11V 1W PMDU
Produkt ist nicht verfügbar
BD63715AEFV-E2 |
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Produkt ist nicht verfügbar
BD63720AEFV-E2 |
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Produkt ist nicht verfügbar
BD63715AEFV-E2 |
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
auf Bestellung 2482 Stücke:
Lieferzeit 10-14 Tag (e)BD63720AEFV-E2 |
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
auf Bestellung 2162 Stücke:
Lieferzeit 10-14 Tag (e)RF4E070BNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Produkt ist nicht verfügbar
RF4E070GNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Produkt ist nicht verfügbar
RF4E080BNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
RF4E080GNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Produkt ist nicht verfügbar
RF4E110BNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Produkt ist nicht verfügbar
RF4E110GNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.3 EUR |
6000+ | 0.28 EUR |
RQ3E080GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Produkt ist nicht verfügbar
RQ3E100GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8HSMT
Description: MOSFET N-CH 30V 10A 8HSMT
Produkt ist nicht verfügbar
RQ3E120GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A 8-HSMT
Description: MOSFET N-CH 30V 12A 8-HSMT
Produkt ist nicht verfügbar
RQ3E150GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V
Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.32 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
RQ3E180GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Produkt ist nicht verfügbar
RS1E130GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
Description: MOSFET N-CH 30V 13A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
Produkt ist nicht verfügbar
RS1E150GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Produkt ist nicht verfügbar
RS1E200GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8HSOP
Description: MOSFET N-CH 30V 20A 8HSOP
Produkt ist nicht verfügbar
RS1E240GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.58 EUR |
5000+ | 0.54 EUR |
7500+ | 0.52 EUR |
RS1E320GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 32A 8HSOP
Description: MOSFET N-CH 30V 32A 8HSOP
Produkt ist nicht verfügbar
RF4E070BNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.55 EUR |
14+ | 1.27 EUR |
100+ | 0.99 EUR |
500+ | 0.84 EUR |
RF4E070GNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
30+ | 0.6 EUR |
100+ | 0.42 EUR |
500+ | 0.33 EUR |
1000+ | 0.27 EUR |
RF4E080BNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
18+ | 0.99 EUR |
100+ | 0.69 EUR |
500+ | 0.57 EUR |
1000+ | 0.49 EUR |
RF4E080GNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 782 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
28+ | 0.63 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
RF4E110BNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
auf Bestellung 966 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.92 EUR |
100+ | 0.63 EUR |
500+ | 0.53 EUR |
RF4E110GNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
auf Bestellung 6452 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
24+ | 0.75 EUR |
100+ | 0.52 EUR |
500+ | 0.41 EUR |
1000+ | 0.33 EUR |
RQ3E080GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 2284 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
28+ | 0.65 EUR |
100+ | 0.39 EUR |
500+ | 0.36 EUR |
1000+ | 0.25 EUR |
RQ3E100GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8HSMT
Description: MOSFET N-CH 30V 10A 8HSMT
Produkt ist nicht verfügbar
RQ3E120GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A 8-HSMT
Description: MOSFET N-CH 30V 12A 8-HSMT
auf Bestellung 2621 Stücke:
Lieferzeit 10-14 Tag (e)RQ3E150GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V
Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V
auf Bestellung 19165 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.36 EUR |
RQ3E180GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
auf Bestellung 4590 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.74 EUR |
17+ | 1.08 EUR |
100+ | 0.71 EUR |
500+ | 0.55 EUR |
1000+ | 0.5 EUR |
RS1E130GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
Description: MOSFET N-CH 30V 13A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
auf Bestellung 1051 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.84 EUR |
100+ | 0.58 EUR |
500+ | 0.46 EUR |
1000+ | 0.37 EUR |
RS1E150GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 2255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
20+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
RS1E200GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8HSOP
Description: MOSFET N-CH 30V 20A 8HSOP
Produkt ist nicht verfügbar
RS1E240GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 8661 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.2 EUR |
13+ | 1.39 EUR |
100+ | 0.92 EUR |
500+ | 0.72 EUR |
1000+ | 0.65 EUR |
RS1E280GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: MOSFET N-CH 30V 28A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 874 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.53 EUR |
13+ | 1.37 EUR |
100+ | 1.07 EUR |
RS1E320GNTB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 32A 8HSOP
Description: MOSFET N-CH 30V 32A 8HSOP
Produkt ist nicht verfügbar